Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • I. M. Anteney
  • P. Ashburn
  • G. J. Parker
  • G. Lippert
  • H. J. Osten

Externe Organisationen

  • University of Southampton
  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksESSDERC 1998
UntertitelProceedings of the 28th European Solid-State Device Research Conference
Herausgeber/-innenA. Touboul, Y. Danto, H. Grunbacher
Herausgeber (Verlag)IEEE Computer Society
Seiten132-135
Seitenumfang4
ISBN (elektronisch)2863322346
PublikationsstatusVeröffentlicht - 1998
Extern publiziertJa
Veranstaltung28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, Frankreich
Dauer: 8 Sept. 199810 Sept. 1998

Publikationsreihe

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Abstract

The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.

ASJC Scopus Sachgebiete

Zitieren

Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs. / Anteney, I. M.; Ashburn, P.; Parker, G. J. et al.
ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference. Hrsg. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. S. 132-135 1503506 (European Solid-State Device Research Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Anteney, IM, Ashburn, P, Parker, GJ, Lippert, G & Osten, HJ 1998, Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs. in A Touboul, Y Danto & H Grunbacher (Hrsg.), ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference., 1503506, European Solid-State Device Research Conference, IEEE Computer Society, S. 132-135, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, Frankreich, 8 Sept. 1998.
Anteney, I. M., Ashburn, P., Parker, G. J., Lippert, G., & Osten, H. J. (1998). Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs. In A. Touboul, Y. Danto, & H. Grunbacher (Hrsg.), ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference (S. 132-135). Artikel 1503506 (European Solid-State Device Research Conference). IEEE Computer Society.
Anteney IM, Ashburn P, Parker GJ, Lippert G, Osten HJ. Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs. in Touboul A, Danto Y, Grunbacher H, Hrsg., ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference. IEEE Computer Society. 1998. S. 132-135. 1503506. (European Solid-State Device Research Conference).
Anteney, I. M. ; Ashburn, P. ; Parker, G. J. et al. / Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe : C HBTs. ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference. Hrsg. / A. Touboul ; Y. Danto ; H. Grunbacher. IEEE Computer Society, 1998. S. 132-135 (European Solid-State Device Research Conference).
Download
@inproceedings{b166e0e8d8b04963bc9f0aa293b2ae02,
title = "Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe: C HBTs",
abstract = "The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.",
author = "Anteney, {I. M.} and P. Ashburn and Parker, {G. J.} and G. Lippert and Osten, {H. J.}",
year = "1998",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "132--135",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",

}

Download

TY - GEN

T1 - Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe

T2 - 28th European Solid-State Device Research Conference, ESSDERC 1998

AU - Anteney, I. M.

AU - Ashburn, P.

AU - Parker, G. J.

AU - Lippert, G.

AU - Osten, H. J.

PY - 1998

Y1 - 1998

N2 - The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.

AB - The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.

UR - http://www.scopus.com/inward/record.url?scp=84908158074&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84908158074

T3 - European Solid-State Device Research Conference

SP - 132

EP - 135

BT - ESSDERC 1998

A2 - Touboul, A.

A2 - Danto, Y.

A2 - Grunbacher, H.

PB - IEEE Computer Society

Y2 - 8 September 1998 through 10 September 1998

ER -