Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas

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  • Max-Planck-Institut für Festkörperforschung
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Details

OriginalspracheEnglisch
Seiten (von - bis)1349-1352
Seitenumfang4
FachzeitschriftPhysical review letters
Jahrgang59
Ausgabenummer12
PublikationsstatusVeröffentlicht - 1 Jan. 1987
Extern publiziertJa

Abstract

GaAs/AlGaAs heterostructures systematically doped with additional Be or Si impurities near the two-dimensional electron gas show distinct shifts of the quantum Hall plateaus and of the minima in the longitudinal resistivity xx relative to the expected values of the Landau-level filling factor. A quantum Hall plateau xy=h/e2 which does not cross the classical straight line xy0=B/nse is observed. The results are explained by a microscopic transport calculation emphasizing non-Born scattering of electrons by individual impurities.

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Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas. / Haug, R. J.; Gerhardts, R. R.; Klitzing, K. V. et al.
in: Physical review letters, Jahrgang 59, Nr. 12, 01.01.1987, S. 1349-1352.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Haug RJ, Gerhardts RR, Klitzing KV, Ploog K. Effect of repulsive and attractive scattering centers on the magnetotransport properties of a two-dimensional electron gas. Physical review letters. 1987 Jan 1;59(12):1349-1352. doi: 10.1103/PhysRevLett.59.1349
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