Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • E. Lipp
  • M. Eizenberg
  • M. Czernohorsky
  • H. J. Osten

Organisationseinheiten

Externe Organisationen

  • Technion-Israel Institute of Technology
  • Fraunhofer-Institut für Elektronische Nanosysteme ENAS
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer193513
FachzeitschriftApplied physics letters
Jahrgang93
Ausgabenummer19
PublikationsstatusVeröffentlicht - 14 Nov. 2008

Abstract

The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

ASJC Scopus Sachgebiete

Zitieren

Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. / Lipp, E.; Eizenberg, M.; Czernohorsky, M. et al.
in: Applied physics letters, Jahrgang 93, Nr. 19, 193513, 14.11.2008.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Lipp, E., Eizenberg, M., Czernohorsky, M., & Osten, H. J. (2008). Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. Applied physics letters, 93(19), Artikel 193513. https://doi.org/10.1063/1.3028071
Lipp E, Eizenberg M, Czernohorsky M, Osten HJ. Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. Applied physics letters. 2008 Nov 14;93(19):193513. doi: 10.1063/1.3028071
Lipp, E. ; Eizenberg, M. ; Czernohorsky, M. et al. / Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. in: Applied physics letters. 2008 ; Jahrgang 93, Nr. 19.
Download
@article{2a3da4ca29bd43129986d7f92404a8e4,
title = "Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces",
abstract = "The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.",
author = "E. Lipp and M. Eizenberg and M. Czernohorsky and Osten, {H. J.}",
note = "Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (E.L.) acknowledges the support of the Israel Ministry of Science Eshkol grant.",
year = "2008",
month = nov,
day = "14",
doi = "10.1063/1.3028071",
language = "English",
volume = "93",
journal = "Applied physics letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "19",

}

Download

TY - JOUR

T1 - Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

AU - Lipp, E.

AU - Eizenberg, M.

AU - Czernohorsky, M.

AU - Osten, H. J.

N1 - Funding Information: This work was supported by a grant from the German-Israel Foundation for Scientific Research and Development and by the Russell Berrie Nanotechnology Institute at the Technion. Part of this work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (E.L.) acknowledges the support of the Israel Ministry of Science Eshkol grant.

PY - 2008/11/14

Y1 - 2008/11/14

N2 - The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

AB - The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

UR - http://www.scopus.com/inward/record.url?scp=56249139692&partnerID=8YFLogxK

U2 - 10.1063/1.3028071

DO - 10.1063/1.3028071

M3 - Article

AN - SCOPUS:56249139692

VL - 93

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 19

M1 - 193513

ER -