Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 182907 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 93 |
| Ausgabenummer | 18 |
| Publikationsstatus | Veröffentlicht - 6 Nov. 2008 |
Abstract
We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 93, Nr. 18, 182907, 06.11.2008.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Effect of domain boundaries on the electrical properties of crystalline Gd2 O3 thin films
AU - Laha, Apurba
AU - Bugiel, E.
AU - Wang, J. X.
AU - Sun, Q. Q.
AU - Fissel, A.
AU - Osten, H. J.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project.
PY - 2008/11/6
Y1 - 2008/11/6
N2 - We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
AB - We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=55849121951&partnerID=8YFLogxK
U2 - 10.1063/1.3009206
DO - 10.1063/1.3009206
M3 - Article
AN - SCOPUS:55849121951
VL - 93
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 18
M1 - 182907
ER -