Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 325-331 |
| Seitenumfang | 7 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 13 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - Juni 2005 |
| Extern publiziert | Ja |
Abstract
The effect of dissociation of interstitial iron-substitutional boron (FeiBs) pairs, as it occurs under illumination in iron-contaminated silicon solar cells, on the solar cell properties has been studied on the basis of numerical device simulations using reported recombination parameters for Fei and FeiBs. Most cell parameters are found to degrade during FeiBs dissociation. However, the open-circuit voltage can also increase within certain ranges of the iron concentration. Critical iron concentrations are determined, giving the threshold contamination level above which a significant degradation in the corresponding cell parameter can be observed. The threshold iron contamination level of the open-circuit voltage degradation is found to be up to two orders of magnitude larger than the threshold iron level of the short-circuit current degradation. As the behaviour of the cell parameters under illumination is specific to the dissociation of FeiBs pairs, the characteristic changes in the cell parameters due to illumination may be used as a simple way of identifying iron contamination problems in silicon solar cells.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Progress in Photovoltaics: Research and Applications, Jahrgang 13, Nr. 4, 06.2005, S. 325-331.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Effect of dissociation of iron-boron Pairs in crystalline silicon on solar cell properties
AU - Schmidt, Jan
PY - 2005/6
Y1 - 2005/6
N2 - The effect of dissociation of interstitial iron-substitutional boron (FeiBs) pairs, as it occurs under illumination in iron-contaminated silicon solar cells, on the solar cell properties has been studied on the basis of numerical device simulations using reported recombination parameters for Fei and FeiBs. Most cell parameters are found to degrade during FeiBs dissociation. However, the open-circuit voltage can also increase within certain ranges of the iron concentration. Critical iron concentrations are determined, giving the threshold contamination level above which a significant degradation in the corresponding cell parameter can be observed. The threshold iron contamination level of the open-circuit voltage degradation is found to be up to two orders of magnitude larger than the threshold iron level of the short-circuit current degradation. As the behaviour of the cell parameters under illumination is specific to the dissociation of FeiBs pairs, the characteristic changes in the cell parameters due to illumination may be used as a simple way of identifying iron contamination problems in silicon solar cells.
AB - The effect of dissociation of interstitial iron-substitutional boron (FeiBs) pairs, as it occurs under illumination in iron-contaminated silicon solar cells, on the solar cell properties has been studied on the basis of numerical device simulations using reported recombination parameters for Fei and FeiBs. Most cell parameters are found to degrade during FeiBs dissociation. However, the open-circuit voltage can also increase within certain ranges of the iron concentration. Critical iron concentrations are determined, giving the threshold contamination level above which a significant degradation in the corresponding cell parameter can be observed. The threshold iron contamination level of the open-circuit voltage degradation is found to be up to two orders of magnitude larger than the threshold iron level of the short-circuit current degradation. As the behaviour of the cell parameters under illumination is specific to the dissociation of FeiBs pairs, the characteristic changes in the cell parameters due to illumination may be used as a simple way of identifying iron contamination problems in silicon solar cells.
KW - Defects
KW - Recombination
KW - Silicon
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=20444413455&partnerID=8YFLogxK
U2 - 10.1002/pip.594
DO - 10.1002/pip.594
M3 - Article
AN - SCOPUS:20444413455
VL - 13
SP - 325
EP - 331
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 4
ER -