Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • G. Lippert
  • D. Knoll
  • R. Barth
  • B. Heinemann
  • H. Ruecker
  • P. Schley

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)803-806
Seitenumfang4
FachzeitschriftTechnical Digest - International Electron Devices Meeting, IEDM
PublikationsstatusVeröffentlicht - 1997
Extern publiziertJa
Veranstaltung1997 International Electron Devices Meeting - Washington, USA / Vereinigte Staaten
Dauer: 7 Dez. 1997 → 10 Dez. 1997

Abstract

We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.

ASJC Scopus Sachgebiete

Zitieren

Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin. / Osten, H. J.; Lippert, G.; Knoll, D. et al.
in: Technical Digest - International Electron Devices Meeting, IEDM, 1997, S. 803-806.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Osten, HJ, Lippert, G, Knoll, D, Barth, R, Heinemann, B, Ruecker, H & Schley, P 1997, 'Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin', Technical Digest - International Electron Devices Meeting, IEDM, S. 803-806.
Osten, H. J., Lippert, G., Knoll, D., Barth, R., Heinemann, B., Ruecker, H., & Schley, P. (1997). Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin. Technical Digest - International Electron Devices Meeting, IEDM, 803-806.
Osten HJ, Lippert G, Knoll D, Barth R, Heinemann B, Ruecker H et al. Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin. Technical Digest - International Electron Devices Meeting, IEDM. 1997;803-806.
Osten, H. J. ; Lippert, G. ; Knoll, D. et al. / Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin. in: Technical Digest - International Electron Devices Meeting, IEDM. 1997 ; S. 803-806.
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TY - JOUR

T1 - Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin

AU - Osten, H. J.

AU - Lippert, G.

AU - Knoll, D.

AU - Barth, R.

AU - Heinemann, B.

AU - Ruecker, H.

AU - Schley, P.

PY - 1997

Y1 - 1997

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AB - We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.

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M3 - Conference article

AN - SCOPUS:84886448135

SP - 803

EP - 806

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

SN - 0163-1918

T2 - 1997 International Electron Devices Meeting

Y2 - 7 December 1997 through 10 December 1997

ER -