Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 001 |
| Seiten (von - bis) | 131-153 |
| Seitenumfang | 23 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 8 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 1993 |
| Extern publiziert | Ja |
Abstract
Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 8, Nr. 2, 001, 01.12.1993, S. 131-153.
Publikation: Beitrag in Fachzeitschrift › Übersichtsarbeit › Forschung › Peer-Review
}
TY - JOUR
T1 - Edge-state transport and its experimental consequences in high magnetic fields
AU - Haug, R. J.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
AB - Many magnetotransport experiments in two-dimensional electron systems have been explained in recent years within the so-called edge-state model. Starting from a historical context, the model is described. Experiments in Hall-bar geometries with and without gate barriers are reviewed and discussed in terms of the edge-state picture.
UR - http://www.scopus.com/inward/record.url?scp=0027540160&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/8/2/001
DO - 10.1088/0268-1242/8/2/001
M3 - Review article
AN - SCOPUS:0027540160
VL - 8
SP - 131
EP - 153
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 2
M1 - 001
ER -