Edge state transport in high magnetic fields in a two-dimensional electron gas

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

Externe Organisationen

  • Max-Planck-Institut für Festkörperforschung
  • Akademie Věd České Republiky (AV ČR)
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Details

OriginalspracheEnglisch
Seiten (von - bis)229-232
Seitenumfang4
FachzeitschriftSurface science
Jahrgang229
Ausgabenummer1-3
PublikationsstatusVeröffentlicht - 2 Apr. 1990
Extern publiziertJa

Abstract

Experiments on Hall-bar samples with a cross-gate give quantized values of the resistance for integer filling factors. For non-integer filling factors a strong dependence on sample geometry is found. We get a different coupling between gate voltage induced edge states of different levels. A non-equilibrium population of edge states can also be observed for narrow and long Hall-bar samples with good contacts.

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Zitieren

Edge state transport in high magnetic fields in a two-dimensional electron gas. / Haug, R. J.; von Klitzing, K.; Ploog, K. et al.
in: Surface science, Jahrgang 229, Nr. 1-3, 02.04.1990, S. 229-232.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Haug RJ, von Klitzing K, Ploog K, Streda P. Edge state transport in high magnetic fields in a two-dimensional electron gas. Surface science. 1990 Apr 2;229(1-3):229-232. doi: 10.1016/0039-6028(90)90877-B
Haug, R. J. ; von Klitzing, K. ; Ploog, K. et al. / Edge state transport in high magnetic fields in a two-dimensional electron gas. in: Surface science. 1990 ; Jahrgang 229, Nr. 1-3. S. 229-232.
Download
@article{9d822bed559b485c87bbbe761f92eed7,
title = "Edge state transport in high magnetic fields in a two-dimensional electron gas",
abstract = "Experiments on Hall-bar samples with a cross-gate give quantized values of the resistance for integer filling factors. For non-integer filling factors a strong dependence on sample geometry is found. We get a different coupling between gate voltage induced edge states of different levels. A non-equilibrium population of edge states can also be observed for narrow and long Hall-bar samples with good contacts.",
author = "Haug, {R. J.} and {von Klitzing}, K. and K. Ploog and P. Streda",
year = "1990",
month = apr,
day = "2",
doi = "10.1016/0039-6028(90)90877-B",
language = "English",
volume = "229",
pages = "229--232",
journal = "Surface science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",

}

Download

TY - JOUR

T1 - Edge state transport in high magnetic fields in a two-dimensional electron gas

AU - Haug, R. J.

AU - von Klitzing, K.

AU - Ploog, K.

AU - Streda, P.

PY - 1990/4/2

Y1 - 1990/4/2

N2 - Experiments on Hall-bar samples with a cross-gate give quantized values of the resistance for integer filling factors. For non-integer filling factors a strong dependence on sample geometry is found. We get a different coupling between gate voltage induced edge states of different levels. A non-equilibrium population of edge states can also be observed for narrow and long Hall-bar samples with good contacts.

AB - Experiments on Hall-bar samples with a cross-gate give quantized values of the resistance for integer filling factors. For non-integer filling factors a strong dependence on sample geometry is found. We get a different coupling between gate voltage induced edge states of different levels. A non-equilibrium population of edge states can also be observed for narrow and long Hall-bar samples with good contacts.

UR - http://www.scopus.com/inward/record.url?scp=0642364797&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(90)90877-B

DO - 10.1016/0039-6028(90)90877-B

M3 - Article

AN - SCOPUS:0642364797

VL - 229

SP - 229

EP - 232

JO - Surface science

JF - Surface science

SN - 0039-6028

IS - 1-3

ER -

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