Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1672-1676 |
| Seitenumfang | 5 |
| Fachzeitschrift | Semiconductors |
| Jahrgang | 53 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 1 Dez. 2019 |
Abstract
The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Semiconductors, Jahrgang 53, Nr. 12, 01.12.2019, S. 1672-1676.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Edge Doping in Graphene Devices on SiO2 Substrates
AU - Vasilyeva, G. Yu
AU - Smirnov, D.
AU - Vasilyev, Yu B.
AU - Greshnov, A. A.
AU - Haug, Rolf J.
N1 - Funding information: G.Yu. Vasilyeva performed the experimental measurements with the support of the Russian Scientific Foundation, project no. 17-72-10134.
PY - 2019/12/1
Y1 - 2019/12/1
N2 - The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
AB - The conductivity of single layer and bilayer graphene ribbons 0.5–4 μm in width fabricated by oxygen plasma etching is studied experimentally. The dependence of the electron concentration in graphene on the ribbon width is revealed. This effect is explained by the edge doping of graphene due to defects arranged in SiO2 near the ribbon edges. The method of the formation of abrupt p–n junctions in graphene and structures with a constant electron concentration gradient in the graphene plane with the help of edge doping is proposed.
KW - defects
KW - edge doping
KW - graphene
KW - plasma etching
KW - substrate
UR - http://www.scopus.com/inward/record.url?scp=85075943762&partnerID=8YFLogxK
U2 - 10.1134/s1063782619160292
DO - 10.1134/s1063782619160292
M3 - Article
AN - SCOPUS:85075943762
VL - 53
SP - 1672
EP - 1676
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -