Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1832-1837 |
| Seitenumfang | 6 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 55 |
| Ausgabenummer | 9-10 |
| Publikationsstatus | Veröffentlicht - Aug. 2015 |
Abstract
Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 55, Nr. 9-10, 08.2015, S. 1832-1837.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Dynamical IMC-growth calculation
AU - Meinshausen, L.
AU - Weide-Zaage, K.
AU - Frémont, H.
N1 - Publisher Copyright: © 2015 Elsevier Ltd. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/8
Y1 - 2015/8
N2 - Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
AB - Material movement between solder joints and their contact pads leads to the formation of intermetallic compounds at the contact surfaces. Concentration gradients are responsible for this material movement. The intermetallic compound growth during temperature storage and AC/DC electromigration tests on 12 × 12 mm Amkor® PoP with SnAg3.0Cu0.5 ball grid arrays including direct SnAgCu to Cu contacts at their bottom bumps was investigated. Based on the resulting increase in the IMC thickness the average mass flux of Cu and Sn were calculated. The activation energies (EA) diffusion constants (D0), effective charges (Z∗) and heats of transport (Q∗) are determined by measurement. With these parameters the mass fluxes due to concentration gradients, electromigration and thermomigration are calculated and the results were implemented in a routine for the dynamical calculation of the IMC-growth. Finally these calculations were validated by measurements.
KW - IMC growth
KW - Migration
KW - Package on package
KW - Packaging and assembly
KW - Reliability
KW - Simulation
UR - http://www.scopus.com/inward/record.url?scp=84943450986&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2015.06.052
DO - 10.1016/j.microrel.2015.06.052
M3 - Article
AN - SCOPUS:84943450986
VL - 55
SP - 1832
EP - 1837
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 9-10
ER -