Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 319-325 |
| Seitenumfang | 7 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 47 |
| Ausgabenummer | 2-3 |
| Publikationsstatus | Veröffentlicht - Feb. 2007 |
Abstract
In this study the degradation phenomena in dual-damascene copper (DD-Cu) metallizations will be investigated due to high current densities and substrate temperatures by finite element modeling. The static and dynamic simulations and calculations will show the suitability of the method in comparison to experimental results from the literature. Different geometry variations, like overlap and via height as well as a variation of the stress free temperature of the metallization will be carried out. It will be found, that if the maximum temperature in the metallization is near the stress free temperature the electromigration is dominant. If the temperatures differ from the stress free level stress migration will be predominant. Out of this it will be found that the knowledge of the stress free temperature in the metallization is very important for a sufficient migration determination.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 47, Nr. 2-3, 02.2007, S. 319-325.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Dynamic void formation in a DD-copper-structure with different metallization geometry
AU - Weide-Zaage, Kirsten
AU - Dalleau, David
AU - Danto, Yves
AU - Fremont, Helene
N1 - Copyright: Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/2
Y1 - 2007/2
N2 - In this study the degradation phenomena in dual-damascene copper (DD-Cu) metallizations will be investigated due to high current densities and substrate temperatures by finite element modeling. The static and dynamic simulations and calculations will show the suitability of the method in comparison to experimental results from the literature. Different geometry variations, like overlap and via height as well as a variation of the stress free temperature of the metallization will be carried out. It will be found, that if the maximum temperature in the metallization is near the stress free temperature the electromigration is dominant. If the temperatures differ from the stress free level stress migration will be predominant. Out of this it will be found that the knowledge of the stress free temperature in the metallization is very important for a sufficient migration determination.
AB - In this study the degradation phenomena in dual-damascene copper (DD-Cu) metallizations will be investigated due to high current densities and substrate temperatures by finite element modeling. The static and dynamic simulations and calculations will show the suitability of the method in comparison to experimental results from the literature. Different geometry variations, like overlap and via height as well as a variation of the stress free temperature of the metallization will be carried out. It will be found, that if the maximum temperature in the metallization is near the stress free temperature the electromigration is dominant. If the temperatures differ from the stress free level stress migration will be predominant. Out of this it will be found that the knowledge of the stress free temperature in the metallization is very important for a sufficient migration determination.
UR - http://www.scopus.com/inward/record.url?scp=33846591484&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2006.09.012
DO - 10.1016/j.microrel.2006.09.012
M3 - Article
AN - SCOPUS:33846591484
VL - 47
SP - 319
EP - 325
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 2-3
ER -