Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 25-27 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 5 |
| Ausgabenummer | 1 |
| Frühes Online-Datum | 28 Okt. 2010 |
| Publikationsstatus | Veröffentlicht - Jan. 2011 |
| Extern publiziert | Ja |
Abstract
We present a fast and calibration-free carrier lifetime imaging technique based on photoluminescence (PL) measurements using an InGaAs camera for the examination of crystalline silicon wafers. The carrier lifetime is determined from the time dependent luminescence emission after optical excitation. A ratio, including four PL images acquired at different times during the modulated excitation, is calculated and found to depend only on the camera integration time and the effective carrier lifetime. Therefore, the carrier lifetime is unambiguously determined by this ratio without knowing any additional wafer parameter. We demonstrate the applicability of the dynamic PL technique to multicrystalline silicon wafers. (
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 5, Nr. 1, 01.2011, S. 25-27.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Dynamic photoluminescence lifetime imaging for the characterisation of silicon wafers
AU - Herlufsen, Sandra
AU - Ramspeck, Klaus
AU - Hinken, David
AU - Schmidt, Arne
AU - Müller, Jens
AU - Bothe, Karsten
AU - Schmidt, Jan
AU - Brendel, Rolf
N1 - Funding Information: This work was supported by the German state of Lower Saxony.
PY - 2011/1
Y1 - 2011/1
N2 - We present a fast and calibration-free carrier lifetime imaging technique based on photoluminescence (PL) measurements using an InGaAs camera for the examination of crystalline silicon wafers. The carrier lifetime is determined from the time dependent luminescence emission after optical excitation. A ratio, including four PL images acquired at different times during the modulated excitation, is calculated and found to depend only on the camera integration time and the effective carrier lifetime. Therefore, the carrier lifetime is unambiguously determined by this ratio without knowing any additional wafer parameter. We demonstrate the applicability of the dynamic PL technique to multicrystalline silicon wafers. (
AB - We present a fast and calibration-free carrier lifetime imaging technique based on photoluminescence (PL) measurements using an InGaAs camera for the examination of crystalline silicon wafers. The carrier lifetime is determined from the time dependent luminescence emission after optical excitation. A ratio, including four PL images acquired at different times during the modulated excitation, is calculated and found to depend only on the camera integration time and the effective carrier lifetime. Therefore, the carrier lifetime is unambiguously determined by this ratio without knowing any additional wafer parameter. We demonstrate the applicability of the dynamic PL technique to multicrystalline silicon wafers. (
KW - Imaging
KW - Lifetime
KW - Photoluminescence
KW - Si
KW - Wafers
UR - http://www.scopus.com/inward/record.url?scp=78650979276&partnerID=8YFLogxK
U2 - 10.1002/pssr.201004426
DO - 10.1002/pssr.201004426
M3 - Article
AN - SCOPUS:78650979276
VL - 5
SP - 25
EP - 27
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 1
ER -