Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 77-84 |
| Seitenumfang | 8 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 55 |
| Publikationsstatus | Veröffentlicht - 2014 |
| Veranstaltung | 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014 - Hertogenbosch, Niederlande Dauer: 25 März 2014 → 27 März 2014 |
Abstract
We investigate the impact of an injection-dependent carrier lifetime in crystalline silicon on dynamic photoluminescence lifetime imaging (dynamic PLI). Although the dynamic lifetime approach is a technique that evaluates the time-dependence of a quantity proportional to the excess carrier density, it is only weakly influenced by the injection-level dependence of the lifetime. The reason for the little impact is the fact that the evaluation of dynamic PLI measurements does not only involve the decay of the carrier density, as it is common for photoconductance decay measurements, but also the increase of the carrier density directly after switching on the excitation source. In this contribution, we present injection-dependent lifetime measurements that are acquired with the camera-based dynamic PLI technique. We find that the deviation of the actual steady-state carrier lifetime from the lifetime obtained with dynamic PLI is less than 20 % for a wide range of measurement conditions.
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in: Energy Procedia, Jahrgang 55, 2014, S. 77-84.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Dynamic photoluminescence lifetime imaging for injectiondependent lifetime measurements
AU - Herlufsen, Sandra
AU - Bothe, Karsten
AU - Brendel, Rolf
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2014 The Authors. Published by Elsevier Ltd.
PY - 2014
Y1 - 2014
N2 - We investigate the impact of an injection-dependent carrier lifetime in crystalline silicon on dynamic photoluminescence lifetime imaging (dynamic PLI). Although the dynamic lifetime approach is a technique that evaluates the time-dependence of a quantity proportional to the excess carrier density, it is only weakly influenced by the injection-level dependence of the lifetime. The reason for the little impact is the fact that the evaluation of dynamic PLI measurements does not only involve the decay of the carrier density, as it is common for photoconductance decay measurements, but also the increase of the carrier density directly after switching on the excitation source. In this contribution, we present injection-dependent lifetime measurements that are acquired with the camera-based dynamic PLI technique. We find that the deviation of the actual steady-state carrier lifetime from the lifetime obtained with dynamic PLI is less than 20 % for a wide range of measurement conditions.
AB - We investigate the impact of an injection-dependent carrier lifetime in crystalline silicon on dynamic photoluminescence lifetime imaging (dynamic PLI). Although the dynamic lifetime approach is a technique that evaluates the time-dependence of a quantity proportional to the excess carrier density, it is only weakly influenced by the injection-level dependence of the lifetime. The reason for the little impact is the fact that the evaluation of dynamic PLI measurements does not only involve the decay of the carrier density, as it is common for photoconductance decay measurements, but also the increase of the carrier density directly after switching on the excitation source. In this contribution, we present injection-dependent lifetime measurements that are acquired with the camera-based dynamic PLI technique. We find that the deviation of the actual steady-state carrier lifetime from the lifetime obtained with dynamic PLI is less than 20 % for a wide range of measurement conditions.
KW - Charge carrier lifetime
KW - Photoluminescence
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84922331592&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2014.08.081
DO - 10.1016/j.egypro.2014.08.081
M3 - Conference article
AN - SCOPUS:84922331592
VL - 55
SP - 77
EP - 84
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 4th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2014
Y2 - 25 March 2014 through 27 March 2014
ER -