Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • H. Ruecker
  • B. Heinemann
  • D. Bolze
  • D. Knoll
  • D. Krueger
  • R. Kurps
  • H. J. Osten
  • P. Schley
  • B. Tillack
  • P. Zaumseil

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)345-348
Seitenumfang4
FachzeitschriftTechnical Digest - International Electron Devices Meeting
PublikationsstatusVeröffentlicht - 1999
Extern publiziertJa
Veranstaltung1999 IEEE International Devices Meeting (IEDM) - Washington, USA / Vereinigte Staaten
Dauer: 5 Dez. 1999 → 8 Dez. 1999

Abstract

We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

ASJC Scopus Sachgebiete

Zitieren

Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. / Ruecker, H.; Heinemann, B.; Bolze, D. et al.
in: Technical Digest - International Electron Devices Meeting, 1999, S. 345-348.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Ruecker, H, Heinemann, B, Bolze, D, Knoll, D, Krueger, D, Kurps, R, Osten, HJ, Schley, P, Tillack, B & Zaumseil, P 1999, 'Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification', Technical Digest - International Electron Devices Meeting, S. 345-348.
Ruecker, H., Heinemann, B., Bolze, D., Knoll, D., Krueger, D., Kurps, R., Osten, H. J., Schley, P., Tillack, B., & Zaumseil, P. (1999). Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. Technical Digest - International Electron Devices Meeting, 345-348.
Ruecker H, Heinemann B, Bolze D, Knoll D, Krueger D, Kurps R et al. Dopant diffusion in C-doped Si and SiGe: physical model and experimental verification. Technical Digest - International Electron Devices Meeting. 1999;345-348.
Ruecker, H. ; Heinemann, B. ; Bolze, D. et al. / Dopant diffusion in C-doped Si and SiGe : physical model and experimental verification. in: Technical Digest - International Electron Devices Meeting. 1999 ; S. 345-348.
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abstract = "We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.",
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Download

TY - JOUR

T1 - Dopant diffusion in C-doped Si and SiGe

T2 - 1999 IEEE International Devices Meeting (IEDM)

AU - Ruecker, H.

AU - Heinemann, B.

AU - Bolze, D.

AU - Knoll, D.

AU - Krueger, D.

AU - Kurps, R.

AU - Osten, H. J.

AU - Schley, P.

AU - Tillack, B.

AU - Zaumseil, P.

PY - 1999

Y1 - 1999

N2 - We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

AB - We show that B and P exhibit suppressed, and As and Sb enhanced diffusion in C-rich Si. This can be well described by coupled diffusion of C and Si point defects. We present a physical model for the impact of C on dopant diffusion in Si and SiGe and demonstrate its reliability in the context of device characteristics of heterojunction bipolar transistors, which constitute a most sensitive tests for dopant diffusion on the nm scale.

UR - http://www.scopus.com/inward/record.url?scp=17044454277&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17044454277

SP - 345

EP - 348

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 5 December 1999 through 8 December 1999

ER -