Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | 2451-2454 |
| Seitenumfang | 4 |
| ISBN (elektronisch) | 9781509027248 |
| Publikationsstatus | Veröffentlicht - 18 Nov. 2016 |
| Veranstaltung | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, USA / Vereinigte Staaten Dauer: 5 Juni 2016 → 10 Juni 2016 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| Band | 2016-November |
| ISSN (Print) | 0160-8371 |
Abstract
Passivating junctions, like hole-collecting p-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm2 for in situ p+ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in-diffused region within the substrate are electrically connected.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. S. 2451-2454 7750083 (Conference Record of the IEEE Photovoltaic Specialists Conference; Band 2016-November).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Dopant diffusion from p+-poly-Si into c-Si during thermal annealing
AU - Krugener, Jan
AU - Larionova, Yevgeniya
AU - Tetzlaff, Dominic
AU - Wolpensinger, Bettina
AU - Reiter, Sina
AU - Turcu, Mircea
AU - Peibst, Robby
AU - Kahler, Jan Dirk
AU - Wietler, Tobias
N1 - Funding information: This work was supported by the German Federal Ministry for Economic Affairs and Energy (BMWi) under contract no. 0325702B. Furthermore we would like to thank Uwe Hohne, Guido Glowatzki, Bianca Gehring and Renate Winter for sample processing
PY - 2016/11/18
Y1 - 2016/11/18
N2 - Passivating junctions, like hole-collecting p-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm2 for in situ p+ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in-diffused region within the substrate are electrically connected.
AB - Passivating junctions, like hole-collecting p-polycrystalline silicon/SiOx/crystalline silicon junctions, need a thermal activation to activate their excellent passivation and contact properties. Here, the diffusion of boron from the highly doped poly-Si layer into the Si is often considered to compromise the passivation quality. In contrast we show that at least a slight diffusion of boron into the crystalline silicon is present for optimized annealing conditions. We achieve low emitter saturation current densities of 11 fA/cm2 for in situ p+ doped polysilicon deposited by low pressure chemical vapor deposition. Furthermore, we show that the polysilicon layer and the in-diffused region within the substrate are electrically connected.
KW - diffusion
KW - junction formation
KW - low pressure chemical vapor deposition
KW - Passivating contacts
KW - scanning electron microscopy
UR - http://www.scopus.com/inward/record.url?scp=85003561661&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2016.7750083
DO - 10.1109/pvsc.2016.7750083
M3 - Conference contribution
AN - SCOPUS:85003561661
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2451
EP - 2454
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -