Dopant diffusion control by adding carbon into Si and SiGe: Principles and device application

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • D. Knoll
  • H. Rücker

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)262-270
Seitenumfang9
FachzeitschriftMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Jahrgang87
Ausgabenummer3
Frühes Online-Datum22 Okt. 2001
PublikationsstatusVeröffentlicht - 19 Dez. 2001
Extern publiziertJa

Abstract

The incorporation of low concentrations of carbon (<1020 cm-3) into the SiGe region of a heterojunction bipolar transistor (HBT) can significantly suppress boron outdiffusion caused by subsequent processing steps. This effect can be described by coupled diffusion of carbon atoms and Si point defects. We discuss the increase in performance and process margins in SiGe heterojunction bipolar technology by adding carbon. SiGe:C HBTs demonstrate excellent static parameters, exceeding the performance of state-of-the-art SiGe HBTs. Carbon also enhances the high frequency performance, because it allows one to use a high B doping level in a very thin SiGe base layer without outdiffusion from SiGe, even if applying post-epitaxial implants and anneals. Finally, we demonstrate the first modular integration of SiGe:C HBTs into a 0.25 μm, epi-free, dual-gate CMOS platform.

ASJC Scopus Sachgebiete

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Dopant diffusion control by adding carbon into Si and SiGe: Principles and device application. / Osten, H. J.; Knoll, D.; Rücker, H.
in: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Jahrgang 87, Nr. 3, 19.12.2001, S. 262-270.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

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T2 - Principles and device application

AU - Osten, H. J.

AU - Knoll, D.

AU - Rücker, H.

PY - 2001/12/19

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KW - Implantation

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