TY - JOUR

T1 - Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

AU - Bezshlyakh, Daria D.

AU - Spende, Hendrik

AU - Weimann, Thomas

AU - Hinze, Peter

AU - Bornemann, Steffen

AU - Gülink, Jan

AU - Canals, Joan

AU - Prades, Joan Daniel

AU - Dieguez, Angel

AU - Waag, Andreas

N1 - Funding information: This work was funded by the European Union’s Horizon 2020 research and innovation program within the project of ChipScope under grant agreement no. 737089 and by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy—EXC-2123 QuantumFrontiers —390837967. The authors would like to thank C. Margenfeld and I. Manglano Clavero for sample growth in the epitaxy competence center (ec2) and A. Schmidt, J. Breitfelder, and A. Michalski for their technical support during the experiments. The authors gratefully acknowledge the support of the Braunschweig International Graduate School of Metrology B-IGSM and the DFG Research Training Group 1952 Metrology for Complex Nanosystems. J.D.P. acknowledges the support of the ICREA Academia Program, and the DFG Project GrKNanoMet.

PY - 2020/12/1

Y1 - 2020/12/1

N2 - The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

AB - The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

UR - http://www.scopus.com/inward/record.url?scp=85092759042&partnerID=8YFLogxK

U2 - 10.1038/s41378-020-00198-y

DO - 10.1038/s41378-020-00198-y

M3 - Article

AN - SCOPUS:85092759042

VL - 6

JO - Microsystems and Nanoengineering

JF - Microsystems and Nanoengineering

IS - 1

M1 - 88

ER -