Direct observation of the rotational direction of electron spin precession in semiconductors

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Michael Oestreich
  • Daniel Hägele
  • H. C. Schneider
  • A. Knorr
  • A. Hansch
  • S. Hallstein
  • Klaus H. Schmidt
  • K. Köhler
  • Stephan W. Koch
  • W. W. Rühle

Externe Organisationen

  • Philipps-Universität Marburg
  • Max-Planck-Institut für Festkörperforschung
  • Ruhr-Universität Bochum
  • Fraunhofer-Institut für Angewandte Festkörperphysik (IAF)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)753-758
Seitenumfang6
FachzeitschriftSolid State Communications
Jahrgang108
Ausgabenummer10
PublikationsstatusVeröffentlicht - 5 Nov. 1998
Extern publiziertJa

Abstract

A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

ASJC Scopus Sachgebiete

Zitieren

Direct observation of the rotational direction of electron spin precession in semiconductors. / Oestreich, Michael; Hägele, Daniel; Schneider, H. C. et al.
in: Solid State Communications, Jahrgang 108, Nr. 10, 05.11.1998, S. 753-758.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Oestreich, M, Hägele, D, Schneider, HC, Knorr, A, Hansch, A, Hallstein, S, Schmidt, KH, Köhler, K, Koch, SW & Rühle, WW 1998, 'Direct observation of the rotational direction of electron spin precession in semiconductors', Solid State Communications, Jg. 108, Nr. 10, S. 753-758. https://doi.org/10.1016/S0038-1098(98)00440-2
Oestreich, M., Hägele, D., Schneider, H. C., Knorr, A., Hansch, A., Hallstein, S., Schmidt, K. H., Köhler, K., Koch, S. W., & Rühle, W. W. (1998). Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications, 108(10), 753-758. https://doi.org/10.1016/S0038-1098(98)00440-2
Oestreich M, Hägele D, Schneider HC, Knorr A, Hansch A, Hallstein S et al. Direct observation of the rotational direction of electron spin precession in semiconductors. Solid State Communications. 1998 Nov 5;108(10):753-758. doi: 10.1016/S0038-1098(98)00440-2
Oestreich, Michael ; Hägele, Daniel ; Schneider, H. C. et al. / Direct observation of the rotational direction of electron spin precession in semiconductors. in: Solid State Communications. 1998 ; Jahrgang 108, Nr. 10. S. 753-758.
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TY - JOUR

T1 - Direct observation of the rotational direction of electron spin precession in semiconductors

AU - Oestreich, Michael

AU - Hägele, Daniel

AU - Schneider, H. C.

AU - Knorr, A.

AU - Hansch, A.

AU - Hallstein, S.

AU - Schmidt, Klaus H.

AU - Köhler, K.

AU - Koch, Stephan W.

AU - Rühle, W. W.

N1 - Funding information: We would like to thank K. Rother, H. Klann, and M. Preis for technical assistance as well as J. E. Golub, A. P. Heberle, F. Jahnke, M. Kira, and H. J. Queisser for helpful discussions. The financial support by the Deutsche Forschungsgemeinschaft through the Schwerpunktsprogramm Quantenkohärenz in Halbleitern, the SFB 383, and the Leibniz prize is gratefully acknowledged.

PY - 1998/11/5

Y1 - 1998/11/5

N2 - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

AB - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.

KW - A. Semiconductors

KW - D. Spin dynamics

KW - E. Luminescence

KW - E. Time-resolved optical spectroscopy

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U2 - 10.1016/S0038-1098(98)00440-2

DO - 10.1016/S0038-1098(98)00440-2

M3 - Article

AN - SCOPUS:0032487690

VL - 108

SP - 753

EP - 758

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 10

ER -

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