Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 753-758 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solid State Communications |
| Jahrgang | 108 |
| Ausgabenummer | 10 |
| Publikationsstatus | Veröffentlicht - 5 Nov. 1998 |
| Extern publiziert | Ja |
Abstract
A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.
ASJC Scopus Sachgebiete
- Chemie (insg.)
- Allgemeine Chemie
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Solid State Communications, Jahrgang 108, Nr. 10, 05.11.1998, S. 753-758.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Direct observation of the rotational direction of electron spin precession in semiconductors
AU - Oestreich, Michael
AU - Hägele, Daniel
AU - Schneider, H. C.
AU - Knorr, A.
AU - Hansch, A.
AU - Hallstein, S.
AU - Schmidt, Klaus H.
AU - Köhler, K.
AU - Koch, Stephan W.
AU - Rühle, W. W.
N1 - Funding information: We would like to thank K. Rother, H. Klann, and M. Preis for technical assistance as well as J. E. Golub, A. P. Heberle, F. Jahnke, M. Kira, and H. J. Queisser for helpful discussions. The financial support by the Deutsche Forschungsgemeinschaft through the Schwerpunktsprogramm Quantenkohärenz in Halbleitern, the SFB 383, and the Leibniz prize is gratefully acknowledged.
PY - 1998/11/5
Y1 - 1998/11/5
N2 - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.
AB - A new experimental method is presented to determine the sign of the electron Landé g factor in semiconductors by time-resolved magneto photoluminescence. This technique is used to demonstrate the reversal of the electron g factor for different material compositions. Measurements and theoretical estimates for the spin dynamics in quantum well systems are compared.
KW - A. Semiconductors
KW - D. Spin dynamics
KW - E. Luminescence
KW - E. Time-resolved optical spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0032487690&partnerID=8YFLogxK
U2 - 10.1016/S0038-1098(98)00440-2
DO - 10.1016/S0038-1098(98)00440-2
M3 - Article
AN - SCOPUS:0032487690
VL - 108
SP - 753
EP - 758
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 10
ER -