Direct measurement of critical exponents in the quantum Hall regime

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  • Max-Planck-Institut für Festkörperforschung
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OriginalspracheEnglisch
Seiten (von - bis)108-111
Seitenumfang4
FachzeitschriftSurface science
Jahrgang263
Ausgabenummer1-3
PublikationsstatusVeröffentlicht - 19 Feb. 1992
Extern publiziertJa

Abstract

We have studied the magnetoresistance of AlGaAs/GaAs-heterojunctions at millikelvin temperatures in small Hall bar and Corbino geometries with different sizes. Below a characteristic temperature Tc which increases with decreasing sample width, the phase-breaking length Lin is larger than the sample size. Under these conditions the half width ΔB of the longitudinal magnetoresistance no longer depends upon temperature but only upon size. By varying the size it is thus possible to directly investigate the localization transition in the integer quantum Hall regime and to measure the critical exponent v of the localization length ξ α |B - Bc|-v. Our results show a universal behaviour in the three lowest Landau levels. This is in agreement w universality statement of the field-theoretic approach to the metal-insulator transition in the quantum Hall effect. By studying the characteristic temperature Tc for different widths, the temperature exponent p 2 of the inelastic scattering length can also be measured.

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Direct measurement of critical exponents in the quantum Hall regime. / Koch, S.; Haug, R. J.; von Klitzing, K. et al.
in: Surface science, Jahrgang 263, Nr. 1-3, 19.02.1992, S. 108-111.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Koch S, Haug RJ, von Klitzing K, Ploog K. Direct measurement of critical exponents in the quantum Hall regime. Surface science. 1992 Feb 19;263(1-3):108-111. doi: 10.1016/0039-6028(92)90316-X
Koch, S. ; Haug, R. J. ; von Klitzing, K. et al. / Direct measurement of critical exponents in the quantum Hall regime. in: Surface science. 1992 ; Jahrgang 263, Nr. 1-3. S. 108-111.
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AU - Koch, S.

AU - Haug, R. J.

AU - von Klitzing, K.

AU - Ploog, K.

PY - 1992/2/19

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