Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6378387 |
| Seiten (von - bis) | 656-661 |
| Seitenumfang | 6 |
| Fachzeitschrift | IEEE journal of photovoltaics |
| Jahrgang | 3 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 2013 |
Abstract
We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE journal of photovoltaics, Jahrgang 3, Nr. 2, 6378387, 2013, S. 656-661.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Direct laser texturing for high-efficiency silicon solar cells
AU - Zielke, Dimitri
AU - Sylla, David
AU - Neubert, Tobias
AU - Brendel, Rolf
AU - Schmidt, Jan
PY - 2013
Y1 - 2013
N2 - We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
AB - We implement direct laser texturing (DiLaT) into small-area (2 × 2 cm2) passivated emitter and rear solar cells (PERC). On monocrystalline float-zone silicon (FZ-Si) wafers, we achieve an independently confirmed energy conversion efficiency of 19.9% that demonstrates the applicability of DiLaT to high-efficiency solar cells. Applying our DiLaT process to block-cast multicrystalline silicon (mc-Si) wafers, we achieve short-circuit current densities Jsc up to 39.3 mA/cm 2 and efficiencies up to 17.9%. The reduced Jsc value of our mc-Si solar cells compared with the FZ-Si cells is shown to be predominantly due to increased recombination in the bulk and/or the rear.
KW - Laser
KW - photovoltaic cells
KW - silicon
KW - surface texture
UR - http://www.scopus.com/inward/record.url?scp=84875583432&partnerID=8YFLogxK
U2 - 10.1109/JPHOTOV.2012.2228302
DO - 10.1109/JPHOTOV.2012.2228302
M3 - Article
AN - SCOPUS:84875583432
VL - 3
SP - 656
EP - 661
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 2
M1 - 6378387
ER -