Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 4711-4714 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 51 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1995 |
| Extern publiziert | Ja |
Abstract
We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 51, Nr. 7, 01.01.1995, S. 4711-4714.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Direct evidence of tunneling between edge states across a gate-induced potential barrier
AU - Peck, A. J.
AU - Bending, S. J.
AU - Weis, J.
AU - Haug, R. J.
AU - Von Klitzing, K.
AU - Ploog, K.
PY - 1995/1/1
Y1 - 1995/1/1
N2 - We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.
AB - We have studied tunneling in the plane of a two-dimensional electron gas across the imposed potential barrier beneath a very short gate. In quantizing magnetic fields the tunnel conductance shows sharp peaks as a function of applied bias, which vary nonmonotonically in position and amplitude as the field is increased, showing a clear switching behavior near integer filling factors. Our data show reasonable qualitative agreement with a theoretical single-particle model of tunneling between edge states and we propose that this is the origin of our peak structures.
UR - http://www.scopus.com/inward/record.url?scp=0008342624&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.51.4711
DO - 10.1103/PhysRevB.51.4711
M3 - Article
AN - SCOPUS:0008342624
VL - 51
SP - 4711
EP - 4714
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 7
ER -