Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Taowen Wang
  • Florian Ehre
  • Thomas Paul Weiss
  • Boris Veith-Wolf
  • Valeriya Titova
  • Nathalie Valle
  • Michele Melchiorre
  • Omar Ramírez
  • Jan Schmidt
  • Susanne Siebentritt

Organisationseinheiten

Externe Organisationen

  • University of Luxembourg
  • Institut für Solarenergieforschung GmbH (ISFH)
  • Centre de Recherche Public – Gabriel Lippmann Informatics, Systems and Collaboration (ISC)
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Details

OriginalspracheEnglisch
Aufsatznummer2202076
FachzeitschriftAdvanced energy materials
Jahrgang12
Ausgabenummer44
Frühes Online-Datum22 Sept. 2022
PublikationsstatusVeröffentlicht - 24 Nov. 2022

Abstract

To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode factor determined by photoluminescence is the diode factor from the neutral zone of the solar cell and thus a lower bound for the diode factor. Due to metastable defects transitions, the optical diode factor is higher than 1 even at low excitation. Here, the influence of the backside recombination and the doping level on the optical diode factor are studied. First, photoluminescence and solar cell capacitance simulator (SCAPS) simulations are used to determine the back surface recombination velocity of Cu(In, Ga)Se2 with various back contacts and different doping levels. Then, experimental results and simulations show that both back surface recombination and high doping density reduce the optical diode factor. The back surface recombination reduces the optical diode factor with undesirable extra nonradiative recombination. The smaller value achieved by higher doping can increase quasi-Fermi level splitting at the same time. The simulations show that the back surface recombination reduces the optical diode factor due to an illumination-dependent recombination rate. In addition, a higher majority carrier doping reduces the influence of majority carrier gain from metastable defect transitions, thus reducing the optical diode factor.

Zitieren

Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination. / Wang, Taowen; Ehre, Florian; Weiss, Thomas Paul et al.
in: Advanced energy materials, Jahrgang 12, Nr. 44, 2202076, 24.11.2022.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Wang, T, Ehre, F, Weiss, TP, Veith-Wolf, B, Titova, V, Valle, N, Melchiorre, M, Ramírez, O, Schmidt, J & Siebentritt, S 2022, 'Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination', Advanced energy materials, Jg. 12, Nr. 44, 2202076. https://doi.org/10.1002/aenm.202202076
Wang, T., Ehre, F., Weiss, T. P., Veith-Wolf, B., Titova, V., Valle, N., Melchiorre, M., Ramírez, O., Schmidt, J., & Siebentritt, S. (2022). Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination. Advanced energy materials, 12(44), Artikel 2202076. https://doi.org/10.1002/aenm.202202076
Wang T, Ehre F, Weiss TP, Veith-Wolf B, Titova V, Valle N et al. Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination. Advanced energy materials. 2022 Nov 24;12(44):2202076. Epub 2022 Sep 22. doi: 10.1002/aenm.202202076
Wang, Taowen ; Ehre, Florian ; Weiss, Thomas Paul et al. / Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination. in: Advanced energy materials. 2022 ; Jahrgang 12, Nr. 44.
Download
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title = "Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination",
abstract = "To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode factor determined by photoluminescence is the diode factor from the neutral zone of the solar cell and thus a lower bound for the diode factor. Due to metastable defects transitions, the optical diode factor is higher than 1 even at low excitation. Here, the influence of the backside recombination and the doping level on the optical diode factor are studied. First, photoluminescence and solar cell capacitance simulator (SCAPS) simulations are used to determine the back surface recombination velocity of Cu(In, Ga)Se2 with various back contacts and different doping levels. Then, experimental results and simulations show that both back surface recombination and high doping density reduce the optical diode factor. The back surface recombination reduces the optical diode factor with undesirable extra nonradiative recombination. The smaller value achieved by higher doping can increase quasi-Fermi level splitting at the same time. The simulations show that the back surface recombination reduces the optical diode factor due to an illumination-dependent recombination rate. In addition, a higher majority carrier doping reduces the influence of majority carrier gain from metastable defect transitions, thus reducing the optical diode factor.",
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note = "Funding Information: This work was supported by the Luxembourg National Research Fund (FNR) through the PACE project under the grant number PRIDE17/12246511/PACE and through the SeVac project (C17/MS/11655733/SeVac) and the GRISC project (C17/MS/11696002 GRISC). The authors thank all developers of SCAPS at the department of Electronics and Information Systems (ELIS) of the University of Gent. Brahime El Adib is thanked for his technical assistance for SIMS measurements performed within the Advanced Characterization Platform (LIST). For the purpose of open access, the author has applied a Creative Commons Attribution 4.0 International (CC BY 4.0) license to any Author Accepted Manuscript version arising from this submission. ",
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T1 - Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination

AU - Wang, Taowen

AU - Ehre, Florian

AU - Weiss, Thomas Paul

AU - Veith-Wolf, Boris

AU - Titova, Valeriya

AU - Valle, Nathalie

AU - Melchiorre, Michele

AU - Ramírez, Omar

AU - Schmidt, Jan

AU - Siebentritt, Susanne

N1 - Funding Information: This work was supported by the Luxembourg National Research Fund (FNR) through the PACE project under the grant number PRIDE17/12246511/PACE and through the SeVac project (C17/MS/11655733/SeVac) and the GRISC project (C17/MS/11696002 GRISC). The authors thank all developers of SCAPS at the department of Electronics and Information Systems (ELIS) of the University of Gent. Brahime El Adib is thanked for his technical assistance for SIMS measurements performed within the Advanced Characterization Platform (LIST). For the purpose of open access, the author has applied a Creative Commons Attribution 4.0 International (CC BY 4.0) license to any Author Accepted Manuscript version arising from this submission.

PY - 2022/11/24

Y1 - 2022/11/24

N2 - To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode factor determined by photoluminescence is the diode factor from the neutral zone of the solar cell and thus a lower bound for the diode factor. Due to metastable defects transitions, the optical diode factor is higher than 1 even at low excitation. Here, the influence of the backside recombination and the doping level on the optical diode factor are studied. First, photoluminescence and solar cell capacitance simulator (SCAPS) simulations are used to determine the back surface recombination velocity of Cu(In, Ga)Se2 with various back contacts and different doping levels. Then, experimental results and simulations show that both back surface recombination and high doping density reduce the optical diode factor. The back surface recombination reduces the optical diode factor with undesirable extra nonradiative recombination. The smaller value achieved by higher doping can increase quasi-Fermi level splitting at the same time. The simulations show that the back surface recombination reduces the optical diode factor due to an illumination-dependent recombination rate. In addition, a higher majority carrier doping reduces the influence of majority carrier gain from metastable defect transitions, thus reducing the optical diode factor.

AB - To achieve a high fill factor, a small diode factor close to 1 is essential. The optical diode factor determined by photoluminescence is the diode factor from the neutral zone of the solar cell and thus a lower bound for the diode factor. Due to metastable defects transitions, the optical diode factor is higher than 1 even at low excitation. Here, the influence of the backside recombination and the doping level on the optical diode factor are studied. First, photoluminescence and solar cell capacitance simulator (SCAPS) simulations are used to determine the back surface recombination velocity of Cu(In, Ga)Se2 with various back contacts and different doping levels. Then, experimental results and simulations show that both back surface recombination and high doping density reduce the optical diode factor. The back surface recombination reduces the optical diode factor with undesirable extra nonradiative recombination. The smaller value achieved by higher doping can increase quasi-Fermi level splitting at the same time. The simulations show that the back surface recombination reduces the optical diode factor due to an illumination-dependent recombination rate. In addition, a higher majority carrier doping reduces the influence of majority carrier gain from metastable defect transitions, thus reducing the optical diode factor.

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KW - optical diode factor

KW - photoluminescence

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JO - Advanced energy materials

JF - Advanced energy materials

SN - 1614-6832

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ER -

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