Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6497591 |
| Seiten (von - bis) | 1628-1636 |
| Seitenumfang | 9 |
| Fachzeitschrift | IEEE Transactions on Industry Applications |
| Jahrgang | 49 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 12 Apr. 2013 |
Abstract
Digital technology incorporated into the gate drive unit of high-voltage insulated-gate bipolar transistors (IGBTs) allows new features, like automatic optimization of the gate current waveforms for achieving certain properties of the switching transients or automatic adaptation to the operating conditions. This paper presents a digital gate unit with online measurement of the switching waveforms of an IGBT. Based on this, a robust control algorithm is developed to adapt the gate current waveforms to the desired switching behavior, irrespective of the operating conditions. The algorithm is implemented in a field-programmable gate array on the gate unit and experimentally verified for several optimization objectives using 3.3-kV and 1200-A IGBTs.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Transactions on Industry Applications, Jahrgang 49, Nr. 4, 6497591, 12.04.2013, S. 1628-1636.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Digital Adaptive Driving Strategies for High-Voltage IGBTs
AU - Dang, Lan
AU - Kuhn, Harald
AU - Mertens, Axel
PY - 2013/4/12
Y1 - 2013/4/12
N2 - Digital technology incorporated into the gate drive unit of high-voltage insulated-gate bipolar transistors (IGBTs) allows new features, like automatic optimization of the gate current waveforms for achieving certain properties of the switching transients or automatic adaptation to the operating conditions. This paper presents a digital gate unit with online measurement of the switching waveforms of an IGBT. Based on this, a robust control algorithm is developed to adapt the gate current waveforms to the desired switching behavior, irrespective of the operating conditions. The algorithm is implemented in a field-programmable gate array on the gate unit and experimentally verified for several optimization objectives using 3.3-kV and 1200-A IGBTs.
AB - Digital technology incorporated into the gate drive unit of high-voltage insulated-gate bipolar transistors (IGBTs) allows new features, like automatic optimization of the gate current waveforms for achieving certain properties of the switching transients or automatic adaptation to the operating conditions. This paper presents a digital gate unit with online measurement of the switching waveforms of an IGBT. Based on this, a robust control algorithm is developed to adapt the gate current waveforms to the desired switching behavior, irrespective of the operating conditions. The algorithm is implemented in a field-programmable gate array on the gate unit and experimentally verified for several optimization objectives using 3.3-kV and 1200-A IGBTs.
KW - Adaptive strategy
KW - automatic optimization
KW - current source
KW - digital gate drive
KW - high-voltage (HV) insulated-gate bipolar transistor (IGBT)
KW - switching behavior
UR - http://www.scopus.com/inward/record.url?scp=84880868424&partnerID=8YFLogxK
U2 - 10.1109/TIA.2013.2257638
DO - 10.1109/TIA.2013.2257638
M3 - Article
AN - SCOPUS:84880868424
VL - 49
SP - 1628
EP - 1636
JO - IEEE Transactions on Industry Applications
JF - IEEE Transactions on Industry Applications
SN - 0093-9994
IS - 4
M1 - 6497591
ER -