Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 283-288 |
| Seitenumfang | 6 |
| Fachzeitschrift | Microelectronic engineering |
| Jahrgang | 60 |
| Ausgabenummer | 1-2 |
| Frühes Online-Datum | 8 Dez. 2001 |
| Publikationsstatus | Veröffentlicht - Jan. 2002 |
| Extern publiziert | Ja |
| Veranstaltung | Materials for Advanced Metallization (MAM 2001) - Sigtuna, Schweden Dauer: 5 März 2001 → 7 März 2001 |
Abstract
We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronic engineering, Jahrgang 60, Nr. 1-2, 01.2002, S. 283-288.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Diffusion and electrical activity of copper in Si1-x-yGexCy alloys
AU - Hattab, A.
AU - Aboelfotoh, M. O.
AU - Tremblay, G.
AU - Meyer, F.
AU - Kolodzey, J.
AU - Osten, H. J.
AU - Dubois, C.
PY - 2002/1
Y1 - 2002/1
N2 - We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
AB - We investigate copper diffusion in Si-rich Si1-x-yGexCy (x<20%) and Ge-rich (x=93%) Si1-xGex layers. The profiles of the different constituents (Si, Ge, Cu, C, B) were determined using secondary ion mass spectroscopy (SIMS). Carrier profiles were studied by electrical characterizations of Schottky diodes. The structures were prepared by copper deposition on SiGeC alloys at room temperature. The increase of the Ge-content from 0% to 93% results in a decrease of the Cu diffusion depth determined by SIMS. C-incorporation also leads to a reduction of Cu-diffusion. The effect of boron seems to be more important, and Cu-diffusion is well retarded in p-type samples. The electrical activity of Cu in IV-IV alloys depends on the Ge-content. For Si-rich p-type SiGe alloy, we observed a passivation of the boron acceptors attributed to the formation of Cu-B pairs, which also explains the reduction of Cu diffusion. For p-type Ge-rich samples, the acceptor concentration can reach very high values (larger than the boron concentration), and becomes temperature dependent. These results show that boron passivation is no longer the most important effect of Cu diffusion. We suggest that the presence of Cu in Ge-rich alloys produces an acceptor-like trap.
KW - Boron passivation
KW - Cu
KW - SiGeC
KW - Trap
UR - http://www.scopus.com/inward/record.url?scp=0036132992&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(01)00605-0
DO - 10.1016/S0167-9317(01)00605-0
M3 - Conference article
AN - SCOPUS:0036132992
VL - 60
SP - 283
EP - 288
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 1-2
T2 - Materials for Advanced Metallization (MAM 2001)
Y2 - 5 March 2001 through 7 March 2001
ER -