Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2017 International Reliability Physics Symposium, IRPS 2017 |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| Seiten | MR2.1-MR2.7 |
| ISBN (elektronisch) | 9781509066407 |
| Publikationsstatus | Veröffentlicht - 30 Mai 2017 |
| Veranstaltung | 2017 International Reliability Physics Symposium, IRPS 2017 - Monterey, USA / Vereinigte Staaten Dauer: 2 Apr. 2017 → 6 Apr. 2017 |
Publikationsreihe
| Name | IEEE International Reliability Physics Symposium Proceedings |
|---|---|
| ISSN (Print) | 1541-7026 |
Abstract
The use of a thick Copper layer on top of an AlCu-metallization stack instead of a common thick Aluminium layer triggers the need for a change in the reliability characterization, the test structure layouts and reliability test methods. The failure and degradation mechanisms of thick Copper and Aluminium are partly different for the material as well as for thick and thin metal layers. Electromigration and stressmigration are the main effects in thin metal layers. For thick metal layers the high thermal expansion leads to a change in the mechanical stress resulting in a different degradation behaviour and defect mechanisms. The paper describes the differences for reliability test structure layouts, test methods and reliability assessment strategies for thin and thick interconnect layer and thick Copper and Aluminium. Especially the requirements for a reliability test and assessment strategy for non-passivated Copper will be explained.
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2017 International Reliability Physics Symposium, IRPS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. S. MR2.1-MR2.7 7936377 (IEEE International Reliability Physics Symposium Proceedings).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Differences in reliability effects for thick copper and thick aluminium metallizations
AU - Pohl, Martin
AU - Erstling, Marco
AU - Hein, Verena
AU - Weide-Zaage, K.
AU - Chen, T.
N1 - Publisher Copyright: © 2017 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/5/30
Y1 - 2017/5/30
N2 - The use of a thick Copper layer on top of an AlCu-metallization stack instead of a common thick Aluminium layer triggers the need for a change in the reliability characterization, the test structure layouts and reliability test methods. The failure and degradation mechanisms of thick Copper and Aluminium are partly different for the material as well as for thick and thin metal layers. Electromigration and stressmigration are the main effects in thin metal layers. For thick metal layers the high thermal expansion leads to a change in the mechanical stress resulting in a different degradation behaviour and defect mechanisms. The paper describes the differences for reliability test structure layouts, test methods and reliability assessment strategies for thin and thick interconnect layer and thick Copper and Aluminium. Especially the requirements for a reliability test and assessment strategy for non-passivated Copper will be explained.
AB - The use of a thick Copper layer on top of an AlCu-metallization stack instead of a common thick Aluminium layer triggers the need for a change in the reliability characterization, the test structure layouts and reliability test methods. The failure and degradation mechanisms of thick Copper and Aluminium are partly different for the material as well as for thick and thin metal layers. Electromigration and stressmigration are the main effects in thin metal layers. For thick metal layers the high thermal expansion leads to a change in the mechanical stress resulting in a different degradation behaviour and defect mechanisms. The paper describes the differences for reliability test structure layouts, test methods and reliability assessment strategies for thin and thick interconnect layer and thick Copper and Aluminium. Especially the requirements for a reliability test and assessment strategy for non-passivated Copper will be explained.
KW - interconnect test structures
KW - reliability characterization
KW - thick Aluminium
KW - thick Copper
UR - http://www.scopus.com/inward/record.url?scp=85024371260&partnerID=8YFLogxK
U2 - 10.1109/irps.2017.7936377
DO - 10.1109/irps.2017.7936377
M3 - Conference contribution
AN - SCOPUS:85024371260
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - MR2.1-MR2.7
BT - 2017 International Reliability Physics Symposium, IRPS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 International Reliability Physics Symposium, IRPS 2017
Y2 - 2 April 2017 through 6 April 2017
ER -