Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 667-671 |
| Seitenumfang | 5 |
| Fachzeitschrift | Diamond and related materials |
| Jahrgang | 11 |
| Ausgabenummer | 3-6 |
| Publikationsstatus | Veröffentlicht - 1 März 2002 |
Abstract
Atomic force microscopy was successfully applied for the reproducible nanomachining of in-plane gate transistors made from GaAs/AlGaAs heterostructures. Electronic devices with structures of less than 50 nm dimensions were realized by scribing with a pointed cantilever probe. This process demands tips made of an extreme hard material with sufficiently low abrasion. For this purpose all-diamond cantilever probes made of polycrystalline diamond films were proven to be ideally suited. The separate definition of the lateral and vertical probe geometry during diamond cantilever fabrication offers important advantages in comparison to conventionally moulded probes that will be discussed in some detail.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Chemie (insg.)
- Allgemeine Chemie
- Ingenieurwesen (insg.)
- Maschinenbau
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Diamond and related materials, Jahrgang 11, Nr. 3-6, 01.03.2002, S. 667-671.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Diamond cantilever with integrated tip for nanomachining
AU - Oesterschulze, E.
AU - Malavé, A.
AU - Keyser, U. F.
AU - Paesler, M.
AU - Haug, R. J.
PY - 2002/3/1
Y1 - 2002/3/1
N2 - Atomic force microscopy was successfully applied for the reproducible nanomachining of in-plane gate transistors made from GaAs/AlGaAs heterostructures. Electronic devices with structures of less than 50 nm dimensions were realized by scribing with a pointed cantilever probe. This process demands tips made of an extreme hard material with sufficiently low abrasion. For this purpose all-diamond cantilever probes made of polycrystalline diamond films were proven to be ideally suited. The separate definition of the lateral and vertical probe geometry during diamond cantilever fabrication offers important advantages in comparison to conventionally moulded probes that will be discussed in some detail.
AB - Atomic force microscopy was successfully applied for the reproducible nanomachining of in-plane gate transistors made from GaAs/AlGaAs heterostructures. Electronic devices with structures of less than 50 nm dimensions were realized by scribing with a pointed cantilever probe. This process demands tips made of an extreme hard material with sufficiently low abrasion. For this purpose all-diamond cantilever probes made of polycrystalline diamond films were proven to be ideally suited. The separate definition of the lateral and vertical probe geometry during diamond cantilever fabrication offers important advantages in comparison to conventionally moulded probes that will be discussed in some detail.
KW - Applications
KW - Atomic force microscopy
KW - Wear
UR - http://www.scopus.com/inward/record.url?scp=0036508322&partnerID=8YFLogxK
U2 - 10.1016/S0925-9635(01)00542-8
DO - 10.1016/S0925-9635(01)00542-8
M3 - Article
AN - SCOPUS:0036508322
VL - 11
SP - 667
EP - 671
JO - Diamond and related materials
JF - Diamond and related materials
SN - 0925-9635
IS - 3-6
ER -