Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 405-408 |
| Seitenumfang | 4 |
| Fachzeitschrift | e-Journal of Surface Science and Nanotechnology |
| Jahrgang | 7 |
| Publikationsstatus | Veröffentlicht - 4 Apr. 2009 |
Abstract
Two new methods for fabrication of silicon-on-isolator (SOI) structures are studied. The first one is based on the formation of a template single crystalline Si-layer and combines encapsulated solid-vapor-phase epitaxy of silicon on rare-earth-metal-oxide layer, developed for fabrication of oxide/silicon/oxide heterostructures, subsequent chemical etching of the second oxide layer, followed by vapor-phase epitaxial growth of silicon on the template-silicon layer. In the second method, crystalline silicon islands serve as template for further growth of crystalline Si layer. Structural investigations show no interface and no noticeable differences in structure quality between these two silicon sub-layers grown on each other. Silicon-substrate/oxide/silicon heterostructure exhibits transition of the substrate crystalline structure with A/B/A twinning relationship. Initial stage of deposition of the template silicon is crucial for its structural quality.
ASJC Scopus Sachgebiete
- Biochemie, Genetik und Molekularbiologie (insg.)
- Biotechnologie
- Chemische Verfahrenstechnik (insg.)
- Bioengineering
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Werkstoffmechanik
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
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in: e-Journal of Surface Science and Nanotechnology, Jahrgang 7, 04.04.2009, S. 405-408.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Development of Multi-Step Procedure for Epitaxial Growth of Crystalline Silicon on Rare-Earth-Metal Oxide for SOI-Applications
AU - Dargis, R.
AU - Fissel, A.
AU - Bugiel, E.
AU - Schwendt, D.
AU - Wietler, T.
AU - Laha, A.
AU - Osten, H. J.
PY - 2009/4/4
Y1 - 2009/4/4
N2 - Two new methods for fabrication of silicon-on-isolator (SOI) structures are studied. The first one is based on the formation of a template single crystalline Si-layer and combines encapsulated solid-vapor-phase epitaxy of silicon on rare-earth-metal-oxide layer, developed for fabrication of oxide/silicon/oxide heterostructures, subsequent chemical etching of the second oxide layer, followed by vapor-phase epitaxial growth of silicon on the template-silicon layer. In the second method, crystalline silicon islands serve as template for further growth of crystalline Si layer. Structural investigations show no interface and no noticeable differences in structure quality between these two silicon sub-layers grown on each other. Silicon-substrate/oxide/silicon heterostructure exhibits transition of the substrate crystalline structure with A/B/A twinning relationship. Initial stage of deposition of the template silicon is crucial for its structural quality.
AB - Two new methods for fabrication of silicon-on-isolator (SOI) structures are studied. The first one is based on the formation of a template single crystalline Si-layer and combines encapsulated solid-vapor-phase epitaxy of silicon on rare-earth-metal-oxide layer, developed for fabrication of oxide/silicon/oxide heterostructures, subsequent chemical etching of the second oxide layer, followed by vapor-phase epitaxial growth of silicon on the template-silicon layer. In the second method, crystalline silicon islands serve as template for further growth of crystalline Si layer. Structural investigations show no interface and no noticeable differences in structure quality between these two silicon sub-layers grown on each other. Silicon-substrate/oxide/silicon heterostructure exhibits transition of the substrate crystalline structure with A/B/A twinning relationship. Initial stage of deposition of the template silicon is crucial for its structural quality.
KW - High-k dielectrics
KW - Molecular Beam Epitaxy (MBE)
KW - Rare earth oxide
KW - Silicon on isolator
UR - http://www.scopus.com/inward/record.url?scp=68849122516&partnerID=8YFLogxK
U2 - 10.1380/ejssnt.2009.405
DO - 10.1380/ejssnt.2009.405
M3 - Article
AN - SCOPUS:68849122516
VL - 7
SP - 405
EP - 408
JO - e-Journal of Surface Science and Nanotechnology
JF - e-Journal of Surface Science and Nanotechnology
ER -