Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 147-152 |
Seitenumfang | 6 |
Fachzeitschrift | Energy Procedia |
Jahrgang | 8 |
Frühes Online-Datum | 12 Aug. 2011 |
Publikationsstatus | Veröffentlicht - 2011 |
Abstract
The electroluminescence emission of crystalline silicon solar cells at near-bandgap wavelengths is investigated. We show that the intensity of the emitted luminescence at near-bandgap wavelengths is directly proportional to the collection diffusion length Lc which is a measure of bulk and rear surface recombination properties and determines the short circuit current of a solar cell illuminated with light of near-bandgap wavelengths. We provide experimental evidence for the determination of Lc by carrying out electroluminescence measurements on a set of 15 specially prepared monocrystalline silicon solar cells with different thicknesses. Moreover, we demonstrate and discuss the applicability of the proposed method to obtain images of the collection diffusion length Lc of multicrystalline silicon solar cells. The values determined by electroluminescence imaging coincide with values obtained from spectrally resolved quantum efficiency measurements with a relative accuracy of 13 %.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 8, 2011, S. 147-152.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Determination of the collection diffusion length by electroluminescence imaging
AU - Schinke, Carsten
AU - Hinken, David
AU - Bothe, Karsten
AU - Ulzhöfer, Christian
AU - Milsted, Ashley
AU - Schmidt, Jan
AU - Brendel, Rolf
PY - 2011
Y1 - 2011
N2 - The electroluminescence emission of crystalline silicon solar cells at near-bandgap wavelengths is investigated. We show that the intensity of the emitted luminescence at near-bandgap wavelengths is directly proportional to the collection diffusion length Lc which is a measure of bulk and rear surface recombination properties and determines the short circuit current of a solar cell illuminated with light of near-bandgap wavelengths. We provide experimental evidence for the determination of Lc by carrying out electroluminescence measurements on a set of 15 specially prepared monocrystalline silicon solar cells with different thicknesses. Moreover, we demonstrate and discuss the applicability of the proposed method to obtain images of the collection diffusion length Lc of multicrystalline silicon solar cells. The values determined by electroluminescence imaging coincide with values obtained from spectrally resolved quantum efficiency measurements with a relative accuracy of 13 %.
AB - The electroluminescence emission of crystalline silicon solar cells at near-bandgap wavelengths is investigated. We show that the intensity of the emitted luminescence at near-bandgap wavelengths is directly proportional to the collection diffusion length Lc which is a measure of bulk and rear surface recombination properties and determines the short circuit current of a solar cell illuminated with light of near-bandgap wavelengths. We provide experimental evidence for the determination of Lc by carrying out electroluminescence measurements on a set of 15 specially prepared monocrystalline silicon solar cells with different thicknesses. Moreover, we demonstrate and discuss the applicability of the proposed method to obtain images of the collection diffusion length Lc of multicrystalline silicon solar cells. The values determined by electroluminescence imaging coincide with values obtained from spectrally resolved quantum efficiency measurements with a relative accuracy of 13 %.
KW - Collection diffusion length
KW - Electroluminescence imaging
UR - http://www.scopus.com/inward/record.url?scp=80052082343&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2011.06.116
DO - 10.1016/j.egypro.2011.06.116
M3 - Article
AN - SCOPUS:80052082343
VL - 8
SP - 147
EP - 152
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -