TY - JOUR

T1 - Detailed Analysis and Understanding of the Transport Mechanism of Poly-Si-Based Carrier Selective Junctions

AU - Campa, Andrej

AU - Smole, Franc

AU - Folchert, Nils

AU - Wietler, Tobias

AU - Min, Byungsul

AU - Brendel, Rolf

AU - Topic, Marko

N1 - Funding information: Manuscript received July 12, 2019; revised September 4, 2019; accepted September 20, 2019. Date of publication October 14, 2019; date of current version October 28, 2019. This work was supported in part by the European Union’s Horizon 2020 research and innovation programme under Grant 727529 and in part by the Slovenian Research Agency under the P2-0197 program. (Corresponding author: Andrej C?ampa.) A. C? ampa, F. Smole, and M. Topic? are with the Faculty of Electrical Engineering, University of Ljubljana, SI-1000 Ljubljana, Slovenia (e-mail: Andrej.campa@fe.uni-lj.si; franc.smole@fe.uni-lj.si; marko.topic@ fe.uni-lj.si). This work was supported in part by the European Union's Horizon 2020 research and innovation programme under Grant 727529 and in part by the Slovenian Research Agency under the P2-0197 program.

PY - 2019/11

Y1 - 2019/11

N2 - We investigate the transport mechanism of poly-Si-based carrier-selective junctions using the two-dimensional numerical semiconductor device simulations. The detailed transport model considers the charge carrier transport through the pinholes as well as tunneling through a very thin silicon oxide simultaneously. For the verification of the simulation model, the complete temperature dependent transfer length method is modeled and its results are verified with measurements of two different samples. By means of rigorous simulations, the influence of different pinhole geometrical and material parameters on junction resistivity are investigated and explained in detail. From the presented results, the fundamental understanding needed for optimizing the poly-Si-based carrier selective junction in respect to the main design parameters such as doping level in poly-Si, annealing time, silicon oxide thickness, and pinhole density is given. The detailed analysis shows the pinhole channel plays the most crucial role in the design of poly-Si-based carrier-selective junctions if the silicon oxide layer thickness is larger than 2 nm.

AB - We investigate the transport mechanism of poly-Si-based carrier-selective junctions using the two-dimensional numerical semiconductor device simulations. The detailed transport model considers the charge carrier transport through the pinholes as well as tunneling through a very thin silicon oxide simultaneously. For the verification of the simulation model, the complete temperature dependent transfer length method is modeled and its results are verified with measurements of two different samples. By means of rigorous simulations, the influence of different pinhole geometrical and material parameters on junction resistivity are investigated and explained in detail. From the presented results, the fundamental understanding needed for optimizing the poly-Si-based carrier selective junction in respect to the main design parameters such as doping level in poly-Si, annealing time, silicon oxide thickness, and pinhole density is given. The detailed analysis shows the pinhole channel plays the most crucial role in the design of poly-Si-based carrier-selective junctions if the silicon oxide layer thickness is larger than 2 nm.

KW - Carrier-selective junctions

KW - numerical simula-tions

KW - pinholes

KW - polysilicon on oxide

KW - tunneling

UR - http://www.scopus.com/inward/record.url?scp=85077514990&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2019.2943610

DO - 10.1109/JPHOTOV.2019.2943610

M3 - Article

AN - SCOPUS:85077514990

VL - 9

SP - 1575

EP - 1582

JO - IEEE journal of photovoltaics

JF - IEEE journal of photovoltaics

SN - 2156-3381

IS - 6

M1 - 8867913

ER -