Design considerations for semiconductor spin lasers

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

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OriginalspracheEnglisch
Seiten (von - bis)306-312
Seitenumfang7
FachzeitschriftSuperlattices and Microstructures
Jahrgang37
Ausgabenummer5
PublikationsstatusVeröffentlicht - 26 Jan. 2005
VeranstaltungSpintronics: Spin Injection, Transport, and Manipulation - Bochum, Deutschland
Dauer: 11 Okt. 200412 Okt. 2004

Abstract

The threshold of semiconductor lasers is drastically reduced by injection of spin polarized electrons if the laser meets specific design rules. Taking into account the challenges of spin injection, spin transport, and spin relaxation, we discuss the threshold reduction in surface- and edge-emitting spin lasers at room temperature.

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Design considerations for semiconductor spin lasers. / Oestreich, Michael; Rudolph, Jörg; Winkler, Roland et al.
in: Superlattices and Microstructures, Jahrgang 37, Nr. 5, 26.01.2005, S. 306-312.

Publikation: Beitrag in FachzeitschriftKonferenzaufsatz in FachzeitschriftForschungPeer-Review

Oestreich M, Rudolph J, Winkler R, Hägele D. Design considerations for semiconductor spin lasers. Superlattices and Microstructures. 2005 Jan 26;37(5):306-312. doi: 10.1016/j.spmi.2004.12.007
Oestreich, Michael ; Rudolph, Jörg ; Winkler, Roland et al. / Design considerations for semiconductor spin lasers. in: Superlattices and Microstructures. 2005 ; Jahrgang 37, Nr. 5. S. 306-312.
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abstract = "The threshold of semiconductor lasers is drastically reduced by injection of spin polarized electrons if the laser meets specific design rules. Taking into account the challenges of spin injection, spin transport, and spin relaxation, we discuss the threshold reduction in surface- and edge-emitting spin lasers at room temperature.",
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author = "Michael Oestreich and J{\"o}rg Rudolph and Roland Winkler and Daniel H{\"a}gele",
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T1 - Design considerations for semiconductor spin lasers

AU - Oestreich, Michael

AU - Rudolph, Jörg

AU - Winkler, Roland

AU - Hägele, Daniel

N1 - Funding information: The work is financially supported by the BMBF.

PY - 2005/1/26

Y1 - 2005/1/26

N2 - The threshold of semiconductor lasers is drastically reduced by injection of spin polarized electrons if the laser meets specific design rules. Taking into account the challenges of spin injection, spin transport, and spin relaxation, we discuss the threshold reduction in surface- and edge-emitting spin lasers at room temperature.

AB - The threshold of semiconductor lasers is drastically reduced by injection of spin polarized electrons if the laser meets specific design rules. Taking into account the challenges of spin injection, spin transport, and spin relaxation, we discuss the threshold reduction in surface- and edge-emitting spin lasers at room temperature.

KW - Spintronics

KW - Threshold reduction

KW - Vertical cavity surface emitting laser

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U2 - 10.1016/j.spmi.2004.12.007

DO - 10.1016/j.spmi.2004.12.007

M3 - Conference article

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JO - Superlattices and Microstructures

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T2 - Spintronics: Spin Injection, Transport, and Manipulation

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ER -

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