Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 593-597 |
| Seitenumfang | 5 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 124 |
| Publikationsstatus | Veröffentlicht - Okt. 2017 |
| Veranstaltung | 7th International Conference on Silicon Photovoltaics, SiliconPV 2017 - Freiburg, Deutschland Dauer: 3 Apr. 2017 → 5 Apr. 2017 |
Abstract
In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon.
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in: Energy Procedia, Jahrgang 124, 10.2017, S. 593-597.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Demonstrating the high Voc potential of PEDOT:PSS/c-Si heterojunctions on solar cells
AU - Gogolin, Ralf
AU - Zielke, Dimitri
AU - Descoeudres, A.
AU - Despeisse, Matthieu
AU - Ballif, Christophe
AU - Schmidt, Jan
N1 - Publisher Copyright: © 2017 The Authors. Published by Elsevier Ltd.
PY - 2017/10
Y1 - 2017/10
N2 - In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon.
AB - In this study, we demonstrate the high surface passivation quality of PEDOT:PSS/c-Si junctions for the first time on solar cell level, reaching a record high Voc value of 688 mV after full-area metallization of the PEDOT:PSS. We achieve this by combining the PEDOT:PSS hole-selective layer at the rear of the crystalline silicon wafer with a well-passivating electron-selective a-Si:H(i/n) layer stack at the front. Our results clearly prove the excellent hole selectivity of PEDOT:PSS on crystalline silicon.
KW - heterojunctions
KW - PEDOT:PSS
KW - solar cells
KW - V potential
UR - http://www.scopus.com/inward/record.url?scp=85031909623&partnerID=8YFLogxK
U2 - https://www.repo.uni-hannover.de/handle/123456789/2244
DO - https://www.repo.uni-hannover.de/handle/123456789/2244
M3 - Conference article
VL - 124
SP - 593
EP - 597
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 7th International Conference on Silicon Photovoltaics, SiliconPV 2017
Y2 - 3 April 2017 through 5 April 2017
ER -