Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion |
| Herausgeber/-innen | K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski |
| Seiten | 947-950 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2003 |
| Extern publiziert | Ja |
| Veranstaltung | 3rd World Conference on Photovoltaic Energy Conversion, 2003 - Osaka, Japan Dauer: 11 Mai 2003 → 18 Mai 2003 |
Publikationsreihe
| Name | Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion |
|---|---|
| Band | A |
Abstract
A new defect characterization technique, temperature and injection-dependent lifetime spectroscopy (TIDLS), is introduced. Injection-level dependent lifetime curves are measured at various temperatures by means of the contact-less quasi-steady-state photoconductance (QSSPC) technique. The semiconductor sample is placed on top of a temperature-controlled stage, kept at a short distance from the photoconductance-sensor coil in the rf bridge circuit. The experimental applicability of the TIDLS is demonstrated on an Al-doped Czochralski silicon sample, containing a specific Al-related defect species. It is shown that, compared to previous lifetime spectroscopy techniques, the TIDLS not only determines the defect energy level with improved accuracy, but is also capable of determining the temperature dependence of the capture cross sections. Moreover, the method permits the separation between shallow and deep-level centers.
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- Ingenieurwesen (insg.)
- Allgemeiner Maschinenbau
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Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Hrsg. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. S. 947-950 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Band A).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Defect characterization by temperature and injection-dependent lifetime spectroscopy
AU - Schmidt, Jan
AU - Sinton, Ronald A.
PY - 2003
Y1 - 2003
N2 - A new defect characterization technique, temperature and injection-dependent lifetime spectroscopy (TIDLS), is introduced. Injection-level dependent lifetime curves are measured at various temperatures by means of the contact-less quasi-steady-state photoconductance (QSSPC) technique. The semiconductor sample is placed on top of a temperature-controlled stage, kept at a short distance from the photoconductance-sensor coil in the rf bridge circuit. The experimental applicability of the TIDLS is demonstrated on an Al-doped Czochralski silicon sample, containing a specific Al-related defect species. It is shown that, compared to previous lifetime spectroscopy techniques, the TIDLS not only determines the defect energy level with improved accuracy, but is also capable of determining the temperature dependence of the capture cross sections. Moreover, the method permits the separation between shallow and deep-level centers.
AB - A new defect characterization technique, temperature and injection-dependent lifetime spectroscopy (TIDLS), is introduced. Injection-level dependent lifetime curves are measured at various temperatures by means of the contact-less quasi-steady-state photoconductance (QSSPC) technique. The semiconductor sample is placed on top of a temperature-controlled stage, kept at a short distance from the photoconductance-sensor coil in the rf bridge circuit. The experimental applicability of the TIDLS is demonstrated on an Al-doped Czochralski silicon sample, containing a specific Al-related defect species. It is shown that, compared to previous lifetime spectroscopy techniques, the TIDLS not only determines the defect energy level with improved accuracy, but is also capable of determining the temperature dependence of the capture cross sections. Moreover, the method permits the separation between shallow and deep-level centers.
UR - http://www.scopus.com/inward/record.url?scp=6344249011&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:6344249011
SN - 4990181603
SN - 9784990181604
T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
SP - 947
EP - 950
BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
A2 - Kurokawa, K.
A2 - Kazmerski, L.L.
A2 - McNeils, B.
A2 - Yamaguchi, M.
A2 - Wronski, C.
T2 - 3rd World Conference on Photovoltaic Energy Conversion, 2003
Y2 - 11 May 2003 through 18 May 2003
ER -