Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 93-95 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi - Rapid Research Letters |
| Jahrgang | 2 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Extern publiziert | Ja |
Abstract
The boron-oxygen-related recombination center responsible for the light-induced gradation of solar cells made on boron-doped oxygen-contaminated silicon is deactivated by simultaneously annealing the silicon wafer in the temperature range 135-210 °C and illuminating it with white light. The recombination lifetime after deactivation is found to be stable under illumination at room temperature. The deactivation process is shown to be thermally activated with an activation energy of 0.7 eV. Based on the experimental findings, a defect reaction model is proposed explaining the deactivation of the boron-oxygen center.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi - Rapid Research Letters, Jahrgang 2, Nr. 3, 2008, S. 93-95.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Deactivation of the boron-oxygen recombination center in silicon by illumination at elevated temperature
AU - Lim, Bianca
AU - Bothe, Karsten
AU - Schmidt, Jan
PY - 2008
Y1 - 2008
N2 - The boron-oxygen-related recombination center responsible for the light-induced gradation of solar cells made on boron-doped oxygen-contaminated silicon is deactivated by simultaneously annealing the silicon wafer in the temperature range 135-210 °C and illuminating it with white light. The recombination lifetime after deactivation is found to be stable under illumination at room temperature. The deactivation process is shown to be thermally activated with an activation energy of 0.7 eV. Based on the experimental findings, a defect reaction model is proposed explaining the deactivation of the boron-oxygen center.
AB - The boron-oxygen-related recombination center responsible for the light-induced gradation of solar cells made on boron-doped oxygen-contaminated silicon is deactivated by simultaneously annealing the silicon wafer in the temperature range 135-210 °C and illuminating it with white light. The recombination lifetime after deactivation is found to be stable under illumination at room temperature. The deactivation process is shown to be thermally activated with an activation energy of 0.7 eV. Based on the experimental findings, a defect reaction model is proposed explaining the deactivation of the boron-oxygen center.
UR - http://www.scopus.com/inward/record.url?scp=54949141878&partnerID=8YFLogxK
U2 - 10.1002/pssr.200802009
DO - 10.1002/pssr.200802009
M3 - Article
AN - SCOPUS:54949141878
VL - 2
SP - 93
EP - 95
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 3
ER -