Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • F. Edelman
  • T. Raz
  • Y. Komem
  • P. Zaumseil
  • H. J. Osten
  • M. Capitan

Externe Organisationen

  • Technion-Israel Institute of Technology
  • Leibniz-Institut für innovative Mikroelektronik (IHP)
  • European Synchrotron Radiation Facility
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Details

OriginalspracheEnglisch
Seiten (von - bis)2617-2628
Seitenumfang12
FachzeitschriftPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Jahrgang79
Ausgabenummer11
PublikationsstatusVeröffentlicht - 1 Nov. 1999
Extern publiziertJa

Abstract

The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.

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Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy. / Edelman, F.; Raz, T.; Komem, Y. et al.
in: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Jahrgang 79, Nr. 11, 01.11.1999, S. 2617-2628.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Edelman, F, Raz, T, Komem, Y, Zaumseil, P, Osten, HJ & Capitan, M 1999, 'Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy', Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Jg. 79, Nr. 11, S. 2617-2628. https://doi.org/10.1080/01418619908212013
Edelman, F., Raz, T., Komem, Y., Zaumseil, P., Osten, H. J., & Capitan, M. (1999). Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 79(11), 2617-2628. https://doi.org/10.1080/01418619908212013
Edelman F, Raz T, Komem Y, Zaumseil P, Osten HJ, Capitan M. Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 1999 Nov 1;79(11):2617-2628. doi: 10.1080/01418619908212013
Edelman, F. ; Raz, T. ; Komem, Y. et al. / Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy. in: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 1999 ; Jahrgang 79, Nr. 11. S. 2617-2628.
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abstract = "The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucl{\'e}ation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.",
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T1 - Crystallization of amorphous Si0.5Ge0.5 films studied by means of in-situ X-ray diffraction and in-situ transmission electron microscopy

AU - Edelman, F.

AU - Raz, T.

AU - Komem, Y.

AU - Zaumseil, P.

AU - Osten, H. J.

AU - Capitan, M.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.

AB - The effect of B and P doping on the crystallization kinetics of amorphous Si0.5Ge0.5films was studied by means of in-situ X-ray diffraction (XRD) and in- situ transmission electron microscopy (TEM). Amorphous Si0.5Ge0.5 films, doped and undoped, were deposited by the molecular beam method on SiO2/Si(001) substrates and annealed at temperatures between 500 and 600°C. The crystalline fraction in the films was evaluated by following the intensity of the (220) reflection, obtained by in-situ XRD, as a function of time. It is demonstrated that the crystallization kinetics follow the Avrami formalism. The overall activation energy of crystallization was found to be 3.49eV for P-doped (1020cm-3) Si0.5Ge0.5films. In addition, crystallization parameters such as the incubation time, the nucléation rate and the grain growth rate were determined directly by in-situ TEM. The activation energies for grain growth and for the overall transformation were found to be 2.7 and 2.4 eV respectively for undoped Si0.5Ge0.5films. The films which were highly doped with B and P showed higher crystallization rate than the undoped films did.

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