Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Extern publiziert | Ja |
| Veranstaltung | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, USA / Vereinigte Staaten Dauer: 11 Mai 2008 → 16 Mai 2008 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922635 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Crystalline silicon surface passivation by the negative-charge-dielectric Al2O3
AU - Hoex, B.
AU - Schmidt, J.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
PY - 2008
Y1 - 2008
N2 - In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
AB - In this contribution it will demonstrated that Al2O3 films synthesized by plasma-assisted atomic layer deposition are a very interesting low temperature solution for the passivation of highly and lowly doped p-type c-Si and lightly doped n-type c-Si. From experiments it will be shown that the excellent surface passivation by Al2O3 can for a large part be attributed to a high fixed negative charge density in the film on the film-substrate interface. The implications of this high fixed negative charge density on the surface passivation of both n- and p-type c-Si will be addressed.
UR - http://www.scopus.com/inward/record.url?scp=84879722675&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922635
DO - 10.1109/PVSC.2008.4922635
M3 - Conference contribution
AN - SCOPUS:84879722675
SN - 9781424416417
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -