Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Autoren

  • H. J. Osten
  • A. Laha
  • M. Czemohorsky
  • R. Dargis
  • E. Bugiei
  • A. Fissel

Organisationseinheiten

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Details

OriginalspracheEnglisch
Seiten (von - bis)287-297
Seitenumfang11
FachzeitschriftECS Transactions
Jahrgang11
Ausgabenummer4
PublikationsstatusVeröffentlicht - 2007
Veranstaltung5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, USA / Vereinigte Staaten
Dauer: 8 Okt. 2007 → 10 Okt. 2007

Abstract

We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.

ASJC Scopus Sachgebiete

Zitieren

Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. / Osten, H. J.; Laha, A.; Czemohorsky, M. et al.
in: ECS Transactions, Jahrgang 11, Nr. 4, 2007, S. 287-297.

Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review

Osten, HJ, Laha, A, Czemohorsky, M, Dargis, R, Bugiei, E & Fissel, A 2007, 'Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies', ECS Transactions, Jg. 11, Nr. 4, S. 287-297. https://doi.org/10.1149/1.2779568
Osten, H. J., Laha, A., Czemohorsky, M., Dargis, R., Bugiei, E., & Fissel, A. (2007). Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. ECS Transactions, 11(4), 287-297. https://doi.org/10.1149/1.2779568
Osten HJ, Laha A, Czemohorsky M, Dargis R, Bugiei E, Fissel A. Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. ECS Transactions. 2007;11(4):287-297. doi: 10.1149/1.2779568
Osten, H. J. ; Laha, A. ; Czemohorsky, M. et al. / Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. in: ECS Transactions. 2007 ; Jahrgang 11, Nr. 4. S. 287-297.
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abstract = "We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.",
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AU - Osten, H. J.

AU - Laha, A.

AU - Czemohorsky, M.

AU - Dargis, R.

AU - Bugiei, E.

AU - Fissel, A.

N1 - Acknowledgments: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project. One of the authors (AL) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship.

PY - 2007

Y1 - 2007

N2 - We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.

AB - We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.

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