Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autorschaft

  • H. J. Osten
  • A. Laha
  • M. Czemohorsky
  • R. Dargis
  • E. Bugiei
  • A. Fissel

Organisationseinheiten

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Details

OriginalspracheEnglisch
Titel des SammelwerksPhysics and technology of high-k gate dielectrics 5
Herausgeber (Verlag)The Electrochemical Society
Seiten287-297
Seitenumfang11
ISBN (Print)978-156677570-0
PublikationsstatusVeröffentlicht - 2007
Veranstaltung5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, USA / Vereinigte Staaten
Dauer: 8 Okt. 2007 → 10 Okt. 2007

Publikationsreihe

NameECS Transactions
Herausgeber (Verlag)Electrochemical Society, Inc.
Nummer4
Band11
ISSN (Print)1938-5862

Abstract

We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.

ASJC Scopus Sachgebiete

Zitieren

Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. / Osten, H. J.; Laha, A.; Czemohorsky, M. et al.
Physics and technology of high-k gate dielectrics 5. The Electrochemical Society, 2007. S. 287-297 (ECS Transactions; Band 11, Nr. 4).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Osten, HJ, Laha, A, Czemohorsky, M, Dargis, R, Bugiei, E & Fissel, A 2007, Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. in Physics and technology of high-k gate dielectrics 5. ECS Transactions, Nr. 4, Bd. 11, The Electrochemical Society, S. 287-297, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, USA / Vereinigte Staaten, 8 Okt. 2007. https://doi.org/10.1149/1.2779568
Osten, H. J., Laha, A., Czemohorsky, M., Dargis, R., Bugiei, E., & Fissel, A. (2007). Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. In Physics and technology of high-k gate dielectrics 5 (S. 287-297). (ECS Transactions; Band 11, Nr. 4). The Electrochemical Society. https://doi.org/10.1149/1.2779568
Osten HJ, Laha A, Czemohorsky M, Dargis R, Bugiei E, Fissel A. Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. in Physics and technology of high-k gate dielectrics 5. The Electrochemical Society. 2007. S. 287-297. (ECS Transactions; 4). doi: 10.1149/1.2779568
Osten, H. J. ; Laha, A. ; Czemohorsky, M. et al. / Crystalline Rare-Earth Oxides as High-κ Materials for Future CMOS Technologies. Physics and technology of high-k gate dielectrics 5. The Electrochemical Society, 2007. S. 287-297 (ECS Transactions; 4).
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AU - Laha, A.

AU - Czemohorsky, M.

AU - Dargis, R.

AU - Bugiei, E.

AU - Fissel, A.

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AB - We present results for crystalline gadolinium oxides on silicon in the cubic bixbyite structure grown by solid source molecular beam epitaxy. Additional oxygen supply during growth improves the dielectric properties significantly, Experimental results for Gd2O3-based MOS capacitors grown under optimized conditions show that these layers are excellent candidates for application as very thin high-κ materials replacing SiO2 in future MOS devices, Epitaxial growth of lanthanide oxides on silicon without any interfacial layer has the advantage of enabling defined interfaces engineering. We will show that the electrical properties of epitaxial Gd2O3 thin films on Si substrates can further be improved significantly by an atomic control of interfacial structures due to a proper treatment of silicon surface prior to the oxide growth.

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