Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autoren

  • R. Endres
  • H. D.B. Gottlob
  • M. Schmidt
  • D. Schwendt
  • H. J. Osten
  • U. Schwalke

Organisationseinheiten

Externe Organisationen

  • Technische Universität Darmstadt
  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksPhysics and Technology of High-k Materials 8
Herausgeber (Verlag)Electrochemical Society, Inc.
Seiten25-29
Seitenumfang5
Auflage3
ISBN (elektronisch)9781607681724
ISBN (Print)9781566778220
PublikationsstatusVeröffentlicht - 2010

Publikationsreihe

NameECS Transactions
Nummer3
Band33
ISSN (Print)1938-5862
ISSN (elektronisch)1938-6737

Abstract

In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.

ASJC Scopus Sachgebiete

Zitieren

Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations. / Endres, R.; Gottlob, H. D.B.; Schmidt, M. et al.
Physics and Technology of High-k Materials 8. 3. Aufl. Electrochemical Society, Inc., 2010. S. 25-29 (ECS Transactions; Band 33, Nr. 3).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Endres, R, Gottlob, HDB, Schmidt, M, Schwendt, D, Osten, HJ & Schwalke, U 2010, Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations. in Physics and Technology of High-k Materials 8. 3 Aufl., ECS Transactions, Nr. 3, Bd. 33, Electrochemical Society, Inc., S. 25-29. https://doi.org/10.1149/1.3481588
Endres, R., Gottlob, H. D. B., Schmidt, M., Schwendt, D., Osten, H. J., & Schwalke, U. (2010). Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations. In Physics and Technology of High-k Materials 8 (3 Aufl., S. 25-29). (ECS Transactions; Band 33, Nr. 3). Electrochemical Society, Inc.. https://doi.org/10.1149/1.3481588
Endres R, Gottlob HDB, Schmidt M, Schwendt D, Osten HJ, Schwalke U. Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations. in Physics and Technology of High-k Materials 8. 3 Aufl. Electrochemical Society, Inc. 2010. S. 25-29. (ECS Transactions; 3). doi: 10.1149/1.3481588
Endres, R. ; Gottlob, H. D.B. ; Schmidt, M. et al. / Crystalline Gadolinium Oxide : A Promising High-k Candidate for Future CMOS Generations. Physics and Technology of High-k Materials 8. 3. Aufl. Electrochemical Society, Inc., 2010. S. 25-29 (ECS Transactions; 3).
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@inproceedings{566cc8da860d4e61a408156b281bd484,
title = "Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations",
abstract = "In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.",
author = "R. Endres and Gottlob, {H. D.B.} and M. Schmidt and D. Schwendt and Osten, {H. J.} and U. Schwalke",
year = "2010",
doi = "10.1149/1.3481588",
language = "English",
isbn = "9781566778220",
series = "ECS Transactions",
publisher = "Electrochemical Society, Inc.",
number = "3",
pages = "25--29",
booktitle = "Physics and Technology of High-k Materials 8",
address = "United States",
edition = "3",

}

Download

TY - GEN

T1 - Crystalline Gadolinium Oxide

T2 - A Promising High-k Candidate for Future CMOS Generations

AU - Endres, R.

AU - Gottlob, H. D.B.

AU - Schmidt, M.

AU - Schwendt, D.

AU - Osten, H. J.

AU - Schwalke, U.

PY - 2010

Y1 - 2010

N2 - In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.

AB - In this work, epitaxial grown gadolinium oxide (Gd2O 3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.

UR - http://www.scopus.com/inward/record.url?scp=79952654651&partnerID=8YFLogxK

U2 - 10.1149/1.3481588

DO - 10.1149/1.3481588

M3 - Conference contribution

AN - SCOPUS:79952654651

SN - 9781566778220

T3 - ECS Transactions

SP - 25

EP - 29

BT - Physics and Technology of High-k Materials 8

PB - Electrochemical Society, Inc.

ER -