Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 045021 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 24 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 17 März 2009 |
Abstract
In this work, Gd2O3 thin films grown by molecular beam epitaxy on Si(1 1 1) substrates were investigated by various diffraction methods. The Gd2O3 layers exhibit a highly perfect cubic bixbyite structure with a single domain orientation, low lattice mismatch with Si and good crystallinity. Threefold in-plane symmetry and bright streaky patterns were observed during the oxide growth by in situ high-energy electron diffraction. X-ray diffraction results demonstrate that Gd2O 3 on Si(1 1 1) is fully epitaxial with a single domain orientation with aandepitaxial relationship. The lattice parameter of Gd2O 3 is slightly smaller than the one of the Si substrate. In the in-plane direction, the Gd2O3 layer is only -0.1% mismatched with the Si substrate (relative to 2aSi). This indicates a pseudomorphic growth of Gd2O3 on Si(1 1 1), where the Gd2O3 layer experiences tensile strain in the in-plane direction and compressive strain in the out-of-plane direction.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 24, Nr. 4, 045021, 17.03.2009.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(1 1 1) substrates
T2 - A diffraction study
AU - Wang, J. X.
AU - Laha, A.
AU - Fissel, A.
AU - Schwendt, D.
AU - Dargis, R.
AU - Watahiki, T.
AU - Shayduk, R.
AU - Braun, W.
AU - Liu, T. M.
AU - Osten, H. J.
PY - 2009/3/17
Y1 - 2009/3/17
N2 - In this work, Gd2O3 thin films grown by molecular beam epitaxy on Si(1 1 1) substrates were investigated by various diffraction methods. The Gd2O3 layers exhibit a highly perfect cubic bixbyite structure with a single domain orientation, low lattice mismatch with Si and good crystallinity. Threefold in-plane symmetry and bright streaky patterns were observed during the oxide growth by in situ high-energy electron diffraction. X-ray diffraction results demonstrate that Gd2O 3 on Si(1 1 1) is fully epitaxial with a single domain orientation with aandepitaxial relationship. The lattice parameter of Gd2O 3 is slightly smaller than the one of the Si substrate. In the in-plane direction, the Gd2O3 layer is only -0.1% mismatched with the Si substrate (relative to 2aSi). This indicates a pseudomorphic growth of Gd2O3 on Si(1 1 1), where the Gd2O3 layer experiences tensile strain in the in-plane direction and compressive strain in the out-of-plane direction.
AB - In this work, Gd2O3 thin films grown by molecular beam epitaxy on Si(1 1 1) substrates were investigated by various diffraction methods. The Gd2O3 layers exhibit a highly perfect cubic bixbyite structure with a single domain orientation, low lattice mismatch with Si and good crystallinity. Threefold in-plane symmetry and bright streaky patterns were observed during the oxide growth by in situ high-energy electron diffraction. X-ray diffraction results demonstrate that Gd2O 3 on Si(1 1 1) is fully epitaxial with a single domain orientation with aandepitaxial relationship. The lattice parameter of Gd2O 3 is slightly smaller than the one of the Si substrate. In the in-plane direction, the Gd2O3 layer is only -0.1% mismatched with the Si substrate (relative to 2aSi). This indicates a pseudomorphic growth of Gd2O3 on Si(1 1 1), where the Gd2O3 layer experiences tensile strain in the in-plane direction and compressive strain in the out-of-plane direction.
UR - http://www.scopus.com/inward/record.url?scp=68949105726&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/24/4/045021
DO - 10.1088/0268-1242/24/4/045021
M3 - Article
AN - SCOPUS:68949105726
VL - 24
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 4
M1 - 045021
ER -