Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1978-1988 |
| Seitenumfang | 11 |
| Fachzeitschrift | Optical materials express |
| Jahrgang | 11 |
| Ausgabenummer | 7 |
| Frühes Online-Datum | 8 Juni 2021 |
| Publikationsstatus | Veröffentlicht - 1 Juli 2021 |
Abstract
Nanodiamonds containing silicon-vacancy (SiV) centers with high brightness, high photo-stability, and a narrow zero phonon line (ZPL) have attracted attention for bioimaging, nanoscale thermometry, and quantum technologies. One method to create such nanodiamonds is the milling of diamond films synthesized by chemical vapor deposition (CVD). However, this requires post-processing such as acid treatment and centrifugation after the milling process. Therefore, the number of SiV center-containing nanodiamonds made from an initial CVD diamond is small. An alternative method without these problems is the implantation of Si ions into preselected nanodiamonds. This method, however, has an issue regarding the ZPL linewidths, which are more than twice as broad as those in nanodiamonds synthesized by CVD. In order to reduce the linewidth, we employed annealing treatment at high temperatures (up to 1100°C) and high vacuum after the implantation. For an ion fluence of 1013 ions/cm2, a ZPL with a linewidth of about 7 nm at room temperature was observed for a nanodiamond with a median size of 29.9 ± 16.0 nm. This was close to the linewidth for nanodiamonds created by CVD.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
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in: Optical materials express, Jahrgang 11, Nr. 7, 01.07.2021, S. 1978-1988.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Creation of silicon vacancy color centers with a narrow emission line in nanodiamonds by ion implantation
AU - Takashima, Hideaki
AU - Fukuda, Atsushi
AU - Shimazaki, Konosuke
AU - Iwabata, Yusuke
AU - Kawaguchi, Hiroki
AU - Schell, Andreas W.
AU - Tashima, Toshiyuki
AU - Abe, Hiroshi
AU - Onoda, Shinobu
AU - Ohshima, Takeshi
AU - Takeuchi, Shigeki
N1 - Funding Information: Acknowledgments. We wish to thank Prof. Mitsuaki Kaneko at Kyoto University for SEM measurements. We gratefully acknowledge financial support in the form of Kakenhi Grants-in-Aid (Nos. 21H04444, 26220712, 16K04918, 19K03700, and 19K03686) from the Japan Society for the Promotion of Science (JSPS), the CREST program of the Japan Science and Technology Agency (JST) (JPMJCR1674), and the MEXT Quantum Leap Flagship Program (MEXT Q-LEAP) (JPMXS0118067634). H. T. acknowledges the support of the Matsuo Foundation.
PY - 2021/7/1
Y1 - 2021/7/1
N2 - Nanodiamonds containing silicon-vacancy (SiV) centers with high brightness, high photo-stability, and a narrow zero phonon line (ZPL) have attracted attention for bioimaging, nanoscale thermometry, and quantum technologies. One method to create such nanodiamonds is the milling of diamond films synthesized by chemical vapor deposition (CVD). However, this requires post-processing such as acid treatment and centrifugation after the milling process. Therefore, the number of SiV center-containing nanodiamonds made from an initial CVD diamond is small. An alternative method without these problems is the implantation of Si ions into preselected nanodiamonds. This method, however, has an issue regarding the ZPL linewidths, which are more than twice as broad as those in nanodiamonds synthesized by CVD. In order to reduce the linewidth, we employed annealing treatment at high temperatures (up to 1100°C) and high vacuum after the implantation. For an ion fluence of 1013 ions/cm2, a ZPL with a linewidth of about 7 nm at room temperature was observed for a nanodiamond with a median size of 29.9 ± 16.0 nm. This was close to the linewidth for nanodiamonds created by CVD.
AB - Nanodiamonds containing silicon-vacancy (SiV) centers with high brightness, high photo-stability, and a narrow zero phonon line (ZPL) have attracted attention for bioimaging, nanoscale thermometry, and quantum technologies. One method to create such nanodiamonds is the milling of diamond films synthesized by chemical vapor deposition (CVD). However, this requires post-processing such as acid treatment and centrifugation after the milling process. Therefore, the number of SiV center-containing nanodiamonds made from an initial CVD diamond is small. An alternative method without these problems is the implantation of Si ions into preselected nanodiamonds. This method, however, has an issue regarding the ZPL linewidths, which are more than twice as broad as those in nanodiamonds synthesized by CVD. In order to reduce the linewidth, we employed annealing treatment at high temperatures (up to 1100°C) and high vacuum after the implantation. For an ion fluence of 1013 ions/cm2, a ZPL with a linewidth of about 7 nm at room temperature was observed for a nanodiamond with a median size of 29.9 ± 16.0 nm. This was close to the linewidth for nanodiamonds created by CVD.
UR - http://www.scopus.com/inward/record.url?scp=85107899219&partnerID=8YFLogxK
U2 - 10.1364/OME.424786
DO - 10.1364/OME.424786
M3 - Article
AN - SCOPUS:85107899219
VL - 11
SP - 1978
EP - 1988
JO - Optical materials express
JF - Optical materials express
SN - 2159-3930
IS - 7
ER -