Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 166-169 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Jahrgang | 5 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 Juli 2008 |
| Veranstaltung | 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan Dauer: 23 Juli 2007 → 27 Juli 2007 |
Abstract
The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica Status Solidi (C) Current Topics in Solid State Physics, Jahrgang 5, Nr. 1, 01.07.2008, S. 166-169.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Coulomb-mediated electron bunching in tunneling through coupled quantum dots
AU - Kiesslich, G.
AU - Schöll, E.
AU - Hohls, F.
AU - Haug, R. J.
PY - 2008/7/1
Y1 - 2008/7/1
N2 - The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
AB - The recent observation of super-Poissonian shot noise in the tunneling current through two layers of selfassembled quantum dots is analyzed and discussed in terms of a sequential tunneling model for a single weakly coupled quantum dot stack. We demonstrate that the phenomenon of bunching in the electron transfer can be explained by the sole effect of Coulomb interaction between electrons inside the stack.
UR - http://www.scopus.com/inward/record.url?scp=45849140139&partnerID=8YFLogxK
U2 - 10.1002/pssc.200776502
DO - 10.1002/pssc.200776502
M3 - Conference article
AN - SCOPUS:45849140139
VL - 5
SP - 166
EP - 169
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 1
T2 - 15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15
Y2 - 23 July 2007 through 27 July 2007
ER -