Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1494-1497 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 88 |
| Ausgabenummer | 3 |
| Publikationsstatus | Veröffentlicht - 1 Aug. 2000 |
| Extern publiziert | Ja |
Abstract
Band-to-band Auger recombination in crystalline silicon is investigated by means of quasi-steady-state photoconductance measurements under intermediate-and high-injection conditions. The measurements reveal that the correlation of the charge carriers via Coulombic interaction has to be taken into account to accurately model the observed injection level and doping concentration dependence of the Auger recombination lifetime. A semi-empirical Coulomb-enhanced Auger recombination model is applied in order to simulate the experimental results theoretically.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 88, Nr. 3, 01.08.2000, S. 1494-1497.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high-injection densities
AU - Schmidt, Jan
AU - Kerr, Mark
AU - Altermatt, Pietro P.
PY - 2000/8/1
Y1 - 2000/8/1
N2 - Band-to-band Auger recombination in crystalline silicon is investigated by means of quasi-steady-state photoconductance measurements under intermediate-and high-injection conditions. The measurements reveal that the correlation of the charge carriers via Coulombic interaction has to be taken into account to accurately model the observed injection level and doping concentration dependence of the Auger recombination lifetime. A semi-empirical Coulomb-enhanced Auger recombination model is applied in order to simulate the experimental results theoretically.
AB - Band-to-band Auger recombination in crystalline silicon is investigated by means of quasi-steady-state photoconductance measurements under intermediate-and high-injection conditions. The measurements reveal that the correlation of the charge carriers via Coulombic interaction has to be taken into account to accurately model the observed injection level and doping concentration dependence of the Auger recombination lifetime. A semi-empirical Coulomb-enhanced Auger recombination model is applied in order to simulate the experimental results theoretically.
UR - http://www.scopus.com/inward/record.url?scp=0012577224&partnerID=8YFLogxK
U2 - 10.1063/1.373878
DO - 10.1063/1.373878
M3 - Article
AN - SCOPUS:0012577224
VL - 88
SP - 1494
EP - 1497
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 3
ER -