Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 853-856 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 12 |
| Ausgabenummer | 1-4 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 2002 |
| Veranstaltung | 14th International Conference on the - Prague, Tschechische Republik Dauer: 30 Juli 2001 → 3 Aug. 2001 |
Abstract
Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 12, Nr. 1-4, 01.01.2002, S. 853-856.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Correlations in the local density of states probed by single electron tunneling
AU - Könemann, J.
AU - König, P.
AU - McCann, E.
AU - Fal'ko, V. I.
AU - Haug, R. J.
PY - 2002/1/1
Y1 - 2002/1/1
N2 - Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.
AB - Single electron tunneling via impurity states has been used to probe the local density of states (LDOS) of the emitter of a vertical resonant tunneling device. In this work, we focus on the correlation properties of the LDOS fluctuations. The analysis of the shape of the LDOS-correlation function indicates a reduced effective dimensionality of the electronic correlation in the emitter, which can be explained by the presence of a growth-induced interface in the sample structure.
KW - Electron tunneling
KW - Local density of state
UR - http://www.scopus.com/inward/record.url?scp=0035239364&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(01)00440-4
DO - 10.1016/S1386-9477(01)00440-4
M3 - Conference article
AN - SCOPUS:0035239364
VL - 12
SP - 853
EP - 856
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1-4
T2 - 14th International Conference on the
Y2 - 30 July 2001 through 3 August 2001
ER -