Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | S4-S8 |
| Fachzeitschrift | Journal of Materials Science: Materials in Electronics |
| Jahrgang | 19 |
| Ausgabenummer | SUPPL. 1 |
| Frühes Online-Datum | 11 März 2008 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Extern publiziert | Ja |
Abstract
The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local monochromatic solar cell efficiencies are determined from ILIT measurements under short-circuit conditions and at the maximum power point of the cell. The resulting efficiency images are compared with efficiency images obtained from MW-PCD lifetime images of unprocessed neighbouring wafers using PC1D simulations. We observe a qualitative correlation between the measured and the simulated efficiency images. Areas with reduced efficiency are found in the same locations using both methods. However, the dynamic range in the monochromatic efficiency is larger for the images obtained from ILIT measurements. Possible explanations for this difference are a change in carrier lifetime during cell processing and varying lifetimes on microscopic scales, leading to averaging faults in the lifetime images.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Materials Science: Materials in Electronics, Jahrgang 19, Nr. SUPPL. 1, 2008, S. S4-S8.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Correlation between spatially resolved solar cell efficiency and carrier lifetime of multicrystalline silicon
AU - Ramspeck, K.
AU - Bothe, K.
AU - Schmidt, J.
AU - Brendel, R.
N1 - Funding Information: This work was partially supported by the government of the state of Lower Saxony.
PY - 2008
Y1 - 2008
N2 - The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local monochromatic solar cell efficiencies are determined from ILIT measurements under short-circuit conditions and at the maximum power point of the cell. The resulting efficiency images are compared with efficiency images obtained from MW-PCD lifetime images of unprocessed neighbouring wafers using PC1D simulations. We observe a qualitative correlation between the measured and the simulated efficiency images. Areas with reduced efficiency are found in the same locations using both methods. However, the dynamic range in the monochromatic efficiency is larger for the images obtained from ILIT measurements. Possible explanations for this difference are a change in carrier lifetime during cell processing and varying lifetimes on microscopic scales, leading to averaging faults in the lifetime images.
AB - The correlation between the spatially resolved carrier lifetime of multicrystalline silicon and the spatially resolved monochromatic solar cell efficiency is investigated by means of microwave-detected photoconductance decay (MW-PCD) measurements and illuminated lock-in thermography (ILIT). Local monochromatic solar cell efficiencies are determined from ILIT measurements under short-circuit conditions and at the maximum power point of the cell. The resulting efficiency images are compared with efficiency images obtained from MW-PCD lifetime images of unprocessed neighbouring wafers using PC1D simulations. We observe a qualitative correlation between the measured and the simulated efficiency images. Areas with reduced efficiency are found in the same locations using both methods. However, the dynamic range in the monochromatic efficiency is larger for the images obtained from ILIT measurements. Possible explanations for this difference are a change in carrier lifetime during cell processing and varying lifetimes on microscopic scales, leading to averaging faults in the lifetime images.
UR - http://www.scopus.com/inward/record.url?scp=53649088936&partnerID=8YFLogxK
U2 - 10.1007/s10854-008-9671-8
DO - 10.1007/s10854-008-9671-8
M3 - Article
AN - SCOPUS:53649088936
VL - 19
SP - S4-S8
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - SUPPL. 1
ER -