Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 153105 |
| Fachzeitschrift | Applied physics letters |
| Jahrgang | 88 |
| Ausgabenummer | 15 |
| Frühes Online-Datum | 10 Apr. 2006 |
| Publikationsstatus | Veröffentlicht - 10 Apr. 2006 |
Abstract
We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2 O3.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
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in: Applied physics letters, Jahrgang 88, Nr. 15, 153105, 10.04.2006.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Cooperative solid-vapor-phase epitaxy
T2 - An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures
AU - Fissel, A.
AU - Kühne, D.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 2006/4/10
Y1 - 2006/4/10
N2 - We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2 O3.
AB - We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd2 O3.
UR - http://www.scopus.com/inward/record.url?scp=33646161924&partnerID=8YFLogxK
U2 - 10.1063/1.2192979
DO - 10.1063/1.2192979
M3 - Article
AN - SCOPUS:33646161924
VL - 88
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 15
M1 - 153105
ER -