Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 16265-16273 |
| Seitenumfang | 9 |
| Fachzeitschrift | Journal of Physical Chemistry C |
| Jahrgang | 128 |
| Ausgabenummer | 38 |
| Frühes Online-Datum | 12 Sept. 2024 |
| Publikationsstatus | Veröffentlicht - 26 Sept. 2024 |
Abstract
Low-dimensional van der Waals (vdW) three-dimensional (3D) topological insulators (TIs) have been overlooked, regarding their electromechanical properties. In this study, we experimentally investigate the electromechanical coupling of low-dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenide (Bi2Se3), is taken as an example. Piezoresponse force microscopy (PFM) results of Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The Bi2Se3 nanoflakes have a decreasing effective out-of-plane piezoelectric coefficient d33eff with the thickness increasing, with the d33eff value of ∼0.65 pm V-1 for the 37 nm-thick sample. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by the flexoelectric coefficient, μ39, which is estimated to be approximately 0.13 nC m-1. The results can help to understand the flexoelectricity of low-dimensional vdW TIs with centrosymmetric crystal structures, which is crucial for the design of nanoelectromechanical devices and spintronics built by vdW TIs.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Allgemeine Energie
- Chemie (insg.)
- Physikalische und Theoretische Chemie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Journal of Physical Chemistry C, Jahrgang 128, Nr. 38, 26.09.2024, S. 16265-16273.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Converse Flexoelectricity in van der Waals (vdW) Three-Dimensional Topological Insulator Nanoflakes
AU - Liu, Qiong
AU - Nanthakumar, Srivilliputtur Subbiah
AU - Li, Bin
AU - Cheng, Teresa
AU - Bittner, Florian
AU - Ma, Chenxi
AU - Ding, Fei
AU - Zheng, Lei
AU - Roth, Bernhard
AU - Zhuang, Xiaoying
N1 - Publisher Copyright: © 2024 The Authors. Published by American Chemical Society.
PY - 2024/9/26
Y1 - 2024/9/26
N2 - Low-dimensional van der Waals (vdW) three-dimensional (3D) topological insulators (TIs) have been overlooked, regarding their electromechanical properties. In this study, we experimentally investigate the electromechanical coupling of low-dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenide (Bi2Se3), is taken as an example. Piezoresponse force microscopy (PFM) results of Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The Bi2Se3 nanoflakes have a decreasing effective out-of-plane piezoelectric coefficient d33eff with the thickness increasing, with the d33eff value of ∼0.65 pm V-1 for the 37 nm-thick sample. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by the flexoelectric coefficient, μ39, which is estimated to be approximately 0.13 nC m-1. The results can help to understand the flexoelectricity of low-dimensional vdW TIs with centrosymmetric crystal structures, which is crucial for the design of nanoelectromechanical devices and spintronics built by vdW TIs.
AB - Low-dimensional van der Waals (vdW) three-dimensional (3D) topological insulators (TIs) have been overlooked, regarding their electromechanical properties. In this study, we experimentally investigate the electromechanical coupling of low-dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenide (Bi2Se3), is taken as an example. Piezoresponse force microscopy (PFM) results of Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The Bi2Se3 nanoflakes have a decreasing effective out-of-plane piezoelectric coefficient d33eff with the thickness increasing, with the d33eff value of ∼0.65 pm V-1 for the 37 nm-thick sample. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by the flexoelectric coefficient, μ39, which is estimated to be approximately 0.13 nC m-1. The results can help to understand the flexoelectricity of low-dimensional vdW TIs with centrosymmetric crystal structures, which is crucial for the design of nanoelectromechanical devices and spintronics built by vdW TIs.
U2 - 10.1021/acs.jpcc.4c05690
DO - 10.1021/acs.jpcc.4c05690
M3 - Article
AN - SCOPUS:85203844957
VL - 128
SP - 16265
EP - 16273
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 38
ER -