Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 211-220 |
| Seitenumfang | 10 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 303 |
| Ausgabenummer | 1 SPEC. ISS. |
| Publikationsstatus | Veröffentlicht - 23 Jan. 2007 |
Abstract
The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 303, Nr. 1 SPEC. ISS., 23.01.2007, S. 211-220.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Convective phenomena in large melts including magnetic fields
AU - Muiznieks, A.
AU - Krauze, A.
AU - Nacke, B.
N1 - Funding Information: This work has been carried out with support of the European Social Fund (ESF). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2007/1/23
Y1 - 2007/1/23
N2 - The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments.
AB - The set of characteristic parameters which describe modern large industrial CZ silicon single crystal growth systems is introduced. The main melt flow driving mechanisms are considered, and the characteristic density values of various in the melt acting forces are estimated. The analysis is illustrated with examples of numerical simulation and comparisons with experiments.
KW - A1. Computer simulation
KW - A1. Fluid flows
KW - A1. Stirring
KW - A2. Magnetic field assisted Czochralski method
KW - B2. Semiconducting silicon
UR - http://www.scopus.com/inward/record.url?scp=34047244350&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2006.12.051
DO - 10.1016/j.jcrysgro.2006.12.051
M3 - Article
AN - SCOPUS:34047244350
VL - 303
SP - 211
EP - 220
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 1 SPEC. ISS.
ER -