Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 860-863 |
| Seitenumfang | 4 |
| Fachzeitschrift | Physica E: Low-Dimensional Systems and Nanostructures |
| Jahrgang | 6 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - Feb. 2000 |
| Veranstaltung | 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13) - Ottawa, Ont, Kanada Dauer: 1 Aug. 1999 → 6 Aug. 1999 |
Abstract
By mechanical scratching the surface of a GaAs/AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can be tuned from some mV up to more than 100 mV as determined by measurement of the thermally activated current. Low-resistance barriers show typical tunnelling behaviour at low temperatures whereas high-resistance lines show GΩ resistances in a bias range up to some 10 V allowing their use as in-plane gates. Transport measurements of a side gated single-electron transistor fabricated this way are presented.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physica E: Low-Dimensional Systems and Nanostructures, Jahrgang 6, Nr. 1, 02.2000, S. 860-863.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Controlled mechanical AFM machining of two-dimensional electron systems
T2 - 13th International Conference on the Electronic Properties of Two-Dimensional Systems (EP2DS-13)
AU - Schumacher, H. W.
AU - Keyser, U. F.
AU - Zeitler, U.
AU - Haug, R. J.
AU - Eberl, K.
PY - 2000/2
Y1 - 2000/2
N2 - By mechanical scratching the surface of a GaAs/AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can be tuned from some mV up to more than 100 mV as determined by measurement of the thermally activated current. Low-resistance barriers show typical tunnelling behaviour at low temperatures whereas high-resistance lines show GΩ resistances in a bias range up to some 10 V allowing their use as in-plane gates. Transport measurements of a side gated single-electron transistor fabricated this way are presented.
AB - By mechanical scratching the surface of a GaAs/AlGaAs heterostructure with an atomic force microscope an energetic barrier for the two-dimensional electron gas is formed. The barrier formation is in situ controlled by measuring the room-temperature resistance across the barrier. Barrier heights can be tuned from some mV up to more than 100 mV as determined by measurement of the thermally activated current. Low-resistance barriers show typical tunnelling behaviour at low temperatures whereas high-resistance lines show GΩ resistances in a bias range up to some 10 V allowing their use as in-plane gates. Transport measurements of a side gated single-electron transistor fabricated this way are presented.
UR - http://www.scopus.com/inward/record.url?scp=0034138851&partnerID=8YFLogxK
U2 - 10.1016/S1386-9477(99)00230-1
DO - 10.1016/S1386-9477(99)00230-1
M3 - Conference article
AN - SCOPUS:0034138851
VL - 6
SP - 860
EP - 863
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 1
Y2 - 1 August 1999 through 6 August 1999
ER -