Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 53-56 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of Magnetism and Magnetic Materials |
| Jahrgang | 240 |
| Ausgabenummer | 1-3 |
| Publikationsstatus | Veröffentlicht - 1 Feb. 2002 |
Abstract
We create mesoscopic point and line defects by scanning probe lithography to control the magnetization reversal process in Pt/Co/Pt ultra thin film devices. The domain wall propagation near the defects is studied by the Kerr microscopy and extraordinary Hall effect measurements. The observed domain wall pinning is used to block and channel the domain expansion and to create artificial domain patterns.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Journal of Magnetism and Magnetic Materials, Jahrgang 240, Nr. 1-3, 01.02.2002, S. 53-56.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
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TY - JOUR
T1 - Control of the magnetic domain wall propagation in Pt/Co/Pt ultra thin films using direct mechanical AFM lithography
AU - Schumacher, H. W.
AU - Ravelosona, D.
AU - Cayssol, F.
AU - Wunderlich, J.
AU - Chappert, C.
AU - Mathet, V.
AU - Thiaville, A.
AU - Jamet, J. P.
AU - Ferré, J.
AU - Haug, R. J.
N1 - Funding information: This work was supported by a European Union Marie Curie Fellowship HPMF-CT2000-540.
PY - 2002/2/1
Y1 - 2002/2/1
N2 - We create mesoscopic point and line defects by scanning probe lithography to control the magnetization reversal process in Pt/Co/Pt ultra thin film devices. The domain wall propagation near the defects is studied by the Kerr microscopy and extraordinary Hall effect measurements. The observed domain wall pinning is used to block and channel the domain expansion and to create artificial domain patterns.
AB - We create mesoscopic point and line defects by scanning probe lithography to control the magnetization reversal process in Pt/Co/Pt ultra thin film devices. The domain wall propagation near the defects is studied by the Kerr microscopy and extraordinary Hall effect measurements. The observed domain wall pinning is used to block and channel the domain expansion and to create artificial domain patterns.
KW - Domain wall pinning
KW - Extraordinary hall effect
KW - Magnetic ultra thin films
KW - Perpendicular anisotropy
KW - Scanning probe lithography
UR - http://www.scopus.com/inward/record.url?scp=0036465060&partnerID=8YFLogxK
U2 - 10.1016/S0304-8853(01)00727-2
DO - 10.1016/S0304-8853(01)00727-2
M3 - Article
AN - SCOPUS:0036465060
VL - 240
SP - 53
EP - 56
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
SN - 0304-8853
IS - 1-3
ER -