Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Autorschaft

  • B. Heinemann
  • D. Knoll
  • G. Fischer
  • D. Kruger
  • G. Lippert
  • H. J. Osten
  • H. Rucker
  • W. Ropke
  • P. Schley
  • B. Tillack

Externe Organisationen

  • Leibniz-Institut für innovative Mikroelektronik (IHP)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des SammelwerksEuropean Solid-State Device Research Conference
Herausgeber/-innenH. Grunbacher
Herausgeber (Verlag)IEEE Computer Society
Seiten544-547
Seitenumfang4
ISBN (elektronisch)2863322214
PublikationsstatusVeröffentlicht - 1997
Extern publiziertJa
Veranstaltung27th European Solid-State Device Research Conference, ESSDERC 1997 - Stuttgart, Deutschland
Dauer: 22 Sept. 1997 → 24 Sept. 1997

Publikationsreihe

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Abstract

In this paper, we examine the possibility of sustaining steep B pro les in thin SiGe base layers (25 nm) under real HBT process conditions. Transient enhanced diffusion (TED) due to post-epitaxial implantations is shown to be the main source for outdiffusion of B from the SiGe. We report on a way to suppress TED effects by C incorporation into the epitaxial layer, allowing post-epitaxial implantation to be used in HBT processing.

ASJC Scopus Sachgebiete

Zitieren

Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors. / Heinemann, B.; Knoll, D.; Fischer, G. et al.
European Solid-State Device Research Conference. Hrsg. / H. Grunbacher. IEEE Computer Society, 1997. S. 544-547 (European Solid-State Device Research Conference).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review

Heinemann, B, Knoll, D, Fischer, G, Kruger, D, Lippert, G, Osten, HJ, Rucker, H, Ropke, W, Schley, P & Tillack, B 1997, Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors. in H Grunbacher (Hrsg.), European Solid-State Device Research Conference. European Solid-State Device Research Conference, IEEE Computer Society, S. 544-547, 27th European Solid-State Device Research Conference, ESSDERC 1997, Stuttgart, Deutschland, 22 Sept. 1997. https://doi.org/10.1109/ESSDERC.1997.194486
Heinemann, B., Knoll, D., Fischer, G., Kruger, D., Lippert, G., Osten, H. J., Rucker, H., Ropke, W., Schley, P., & Tillack, B. (1997). Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors. In H. Grunbacher (Hrsg.), European Solid-State Device Research Conference (S. 544-547). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.1997.194486
Heinemann B, Knoll D, Fischer G, Kruger D, Lippert G, Osten HJ et al. Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors. in Grunbacher H, Hrsg., European Solid-State Device Research Conference. IEEE Computer Society. 1997. S. 544-547. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.1997.194486
Heinemann, B. ; Knoll, D. ; Fischer, G. et al. / Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors. European Solid-State Device Research Conference. Hrsg. / H. Grunbacher. IEEE Computer Society, 1997. S. 544-547 (European Solid-State Device Research Conference).
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abstract = "In this paper, we examine the possibility of sustaining steep B pro les in thin SiGe base layers (25 nm) under real HBT process conditions. Transient enhanced diffusion (TED) due to post-epitaxial implantations is shown to be the main source for outdiffusion of B from the SiGe. We report on a way to suppress TED effects by C incorporation into the epitaxial layer, allowing post-epitaxial implantation to be used in HBT processing.",
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Download

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T1 - Control of steep Boron profiles in Si/SiGe heterojunction bipolar transistors

AU - Heinemann, B.

AU - Knoll, D.

AU - Fischer, G.

AU - Kruger, D.

AU - Lippert, G.

AU - Osten, H. J.

AU - Rucker, H.

AU - Ropke, W.

AU - Schley, P.

AU - Tillack, B.

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AB - In this paper, we examine the possibility of sustaining steep B pro les in thin SiGe base layers (25 nm) under real HBT process conditions. Transient enhanced diffusion (TED) due to post-epitaxial implantations is shown to be the main source for outdiffusion of B from the SiGe. We report on a way to suppress TED effects by C incorporation into the epitaxial layer, allowing post-epitaxial implantation to be used in HBT processing.

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PB - IEEE Computer Society

T2 - 27th European Solid-State Device Research Conference, ESSDERC 1997

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