Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Paul Bayerl
  • Nils Folchert
  • Johannes Bayer
  • Marvin Dzinnik
  • Christina Hollemann
  • Rolf Brendel
  • Robby Peibst
  • Rolf J. Haug
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Details

OriginalspracheEnglisch
Seiten (von - bis)936-942
Seitenumfang7
FachzeitschriftProgress in Photovoltaics: Research and Applications
Jahrgang29
Ausgabenummer8
Frühes Online-Datum30 März 2021
PublikationsstatusVeröffentlicht - 16 Juli 2021

Abstract

The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.

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Ziele für nachhaltige Entwicklung

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Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction. / Bayerl, Paul; Folchert, Nils; Bayer, Johannes et al.
in: Progress in Photovoltaics: Research and Applications, Jahrgang 29, Nr. 8, 16.07.2021, S. 936-942.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Bayerl P, Folchert N, Bayer J, Dzinnik M, Hollemann C, Brendel R et al. Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction. Progress in Photovoltaics: Research and Applications. 2021 Jul 16;29(8):936-942. Epub 2021 Mär 30. doi: 10.1002/pip.3417
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title = "Contacting a single nanometer-sized pinhole in the interfacial oxide of a poly-silicon on oxide (POLO) solar cell junction",
abstract = "The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.",
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author = "Paul Bayerl and Nils Folchert and Johannes Bayer and Marvin Dzinnik and Christina Hollemann and Rolf Brendel and Robby Peibst and Haug, {Rolf J.}",
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AU - Bayerl, Paul

AU - Folchert, Nils

AU - Bayer, Johannes

AU - Dzinnik, Marvin

AU - Hollemann, Christina

AU - Brendel, Rolf

AU - Peibst, Robby

AU - Haug, Rolf J.

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PY - 2021/7/16

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N2 - The electrical current through poly-Si on oxide (POLO) solar cells is mediated by tunneling and by nanometer-sized pinholes in the interfacial oxide. To distinguish the two processes, a POLO junction with a measured pinhole density of 1 × 107 cm−2 is contacted by different contact areas ranging from 1 μm2 to 2.5 × 105 μm2, and the temperature-dependent current–voltage curves are measured for the different devices. Model regressions to the measured curves, their temperature dependence, and the quantized value of contact resistances indicate average numbers of pinholes per device corresponding to the expected pinhole density. For the small contacts, the different transport processes can be studied separately, which facilitates further improvements in respect to the present-day POLO junctions. Single-pinhole transport is found for one of the contacts with an area of 1 μm2. Random telegraph noise observed for this device in the current–voltage characteristics shows a high sensitivity to single charges.

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